Comparison study on sol-gel Pb(Zr0.3Ti0.7)O3 and Pb(Zr0.3Ti0.7)O3/PbTiO3 multilayer thin films for pyroelectric infrared detectors

L. L. Sun; O. K. Tan; W. G. Liu; X. F. Chen; W. Zhu

doi:10.1016/S0167-9317(02)00993-0

Comparison study on sol-gel Pb(Zr_0.3Ti_0.7)O₃ and Pb(Zr_0.3Ti_0.7)O₃/PbTiO₃ multilayer thin films for pyroelectric infrared detectors

L. L. Sun, O. K. Tan, W. G. Liu^*, X. F. Chen, W. Zhu

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Conference article › peer-review

19 Citations (Scopus)

Abstract

We compare sol-gel Pb(Zr_0.3Ti_0.7)O₃ (PZT) film and Pb(Zr_0.3Ti_0.7)O₃/PbTiO₃ (PZT/PT) multilayer film for pyroelectric infrared detector application. The microstructure, dielectric, ferroelectric and pyroelectric properties of the pure PZT and PZT/PT multilayer thin films are investigated. The results indicate that the multilayer thin film exhibits lower dielectric constant and lower dielectric loss, which is beneficial for higher figure of merit (FOM). Although the pyroelectric coefficient of the PZT/PT multilayer thin film is 14% lower than that of the pure PZT thin film, the detectivity figures of merit of PZT/PT multilayer thin film is 17% higher than that of the pure PZT thin film due to the reduced dielectric constant and dielectric loss tangent. It is evident that the PZT/PT multilayer thin film is a promising candidate for infrared detection application.

Original language	English
Pages (from-to)	738-744
Number of pages	7
Journal	Microelectronic Engineering
Volume	66
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(02)00993-0
Publication status	Published - Apr 2003
Externally published	Yes
Event	IUMRS-ICEM 2002 - Xi an, China Duration: Jun 10 2002 → Jun 14 2002

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Keywords

Multilayer thin film
Pyroelectric
PZT
Sol-gel

Access to Document

10.1016/S0167-9317(02)00993-0

Cite this

@article{ea5d3f1d52c54cce93a72ac5f79b34ee,

title = "Comparison study on sol-gel Pb(Zr0.3Ti0.7)O3 and Pb(Zr0.3Ti0.7)O3/PbTiO3 multilayer thin films for pyroelectric infrared detectors",

abstract = "We compare sol-gel Pb(Zr0.3Ti0.7)O3 (PZT) film and Pb(Zr0.3Ti0.7)O3/PbTiO3 (PZT/PT) multilayer film for pyroelectric infrared detector application. The microstructure, dielectric, ferroelectric and pyroelectric properties of the pure PZT and PZT/PT multilayer thin films are investigated. The results indicate that the multilayer thin film exhibits lower dielectric constant and lower dielectric loss, which is beneficial for higher figure of merit (FOM). Although the pyroelectric coefficient of the PZT/PT multilayer thin film is 14% lower than that of the pure PZT thin film, the detectivity figures of merit of PZT/PT multilayer thin film is 17% higher than that of the pure PZT thin film due to the reduced dielectric constant and dielectric loss tangent. It is evident that the PZT/PT multilayer thin film is a promising candidate for infrared detection application.",

keywords = "Multilayer thin film, Pyroelectric, PZT, Sol-gel",

author = "Sun, {L. L.} and Tan, {O. K.} and Liu, {W. G.} and Chen, {X. F.} and W. Zhu",

year = "2003",

month = apr,

doi = "10.1016/S0167-9317(02)00993-0",

language = "English",

volume = "66",

pages = "738--744",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "1-4",

note = "IUMRS-ICEM 2002 ; Conference date: 10-06-2002 Through 14-06-2002",

}

TY - JOUR

T1 - Comparison study on sol-gel Pb(Zr0.3Ti0.7)O3 and Pb(Zr0.3Ti0.7)O3/PbTiO3 multilayer thin films for pyroelectric infrared detectors

AU - Sun, L. L.

AU - Tan, O. K.

AU - Liu, W. G.

AU - Chen, X. F.

AU - Zhu, W.

PY - 2003/4

Y1 - 2003/4

N2 - We compare sol-gel Pb(Zr0.3Ti0.7)O3 (PZT) film and Pb(Zr0.3Ti0.7)O3/PbTiO3 (PZT/PT) multilayer film for pyroelectric infrared detector application. The microstructure, dielectric, ferroelectric and pyroelectric properties of the pure PZT and PZT/PT multilayer thin films are investigated. The results indicate that the multilayer thin film exhibits lower dielectric constant and lower dielectric loss, which is beneficial for higher figure of merit (FOM). Although the pyroelectric coefficient of the PZT/PT multilayer thin film is 14% lower than that of the pure PZT thin film, the detectivity figures of merit of PZT/PT multilayer thin film is 17% higher than that of the pure PZT thin film due to the reduced dielectric constant and dielectric loss tangent. It is evident that the PZT/PT multilayer thin film is a promising candidate for infrared detection application.

AB - We compare sol-gel Pb(Zr0.3Ti0.7)O3 (PZT) film and Pb(Zr0.3Ti0.7)O3/PbTiO3 (PZT/PT) multilayer film for pyroelectric infrared detector application. The microstructure, dielectric, ferroelectric and pyroelectric properties of the pure PZT and PZT/PT multilayer thin films are investigated. The results indicate that the multilayer thin film exhibits lower dielectric constant and lower dielectric loss, which is beneficial for higher figure of merit (FOM). Although the pyroelectric coefficient of the PZT/PT multilayer thin film is 14% lower than that of the pure PZT thin film, the detectivity figures of merit of PZT/PT multilayer thin film is 17% higher than that of the pure PZT thin film due to the reduced dielectric constant and dielectric loss tangent. It is evident that the PZT/PT multilayer thin film is a promising candidate for infrared detection application.

KW - Multilayer thin film

KW - Pyroelectric

KW - PZT

KW - Sol-gel

UR - http://www.scopus.com/inward/record.url?scp=0037395041&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037395041&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(02)00993-0

DO - 10.1016/S0167-9317(02)00993-0

M3 - Conference article

AN - SCOPUS:0037395041

SN - 0167-9317

VL - 66

SP - 738

EP - 744

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

T2 - IUMRS-ICEM 2002

Y2 - 10 June 2002 through 14 June 2002

ER -