Complementary organic circuits using evaporated F16CuPc and inkjet printing of PQT

H. S. Tan; B. C. Wang; S. Kamath; J. Chua; M. Shojaei-Baghini; V. R. Rao; N. Mathews; S. G. Mhaisalkar

doi:10.1109/LED.2010.2070483

Complementary organic circuits using evaporated F₁₆CuPc and inkjet printing of PQT

H. S. Tan, B. C. Wang, S. Kamath, J. Chua, M. Shojaei-Baghini, V. R. Rao, N. Mathews, S. G. Mhaisalkar

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Organic complementary inverters and ring oscillators are fabricated using a unique combination of inkjet printing and evaporation of organic semiconductors. p-Type poly (3, 3′-didodecylquaterthiophene) (PQT) is inkjet printed, after which n-type copper hexadecafluorophthalocyanine (F ₁₆CuPc) is evaporated and patterned by shadow masking. A solution-processable bilayer gate dielectric with superior gate leakage characteristics and a simplified process stack is implemented. The inverters show a high noise margin, good gain characteristics, and a switching point close to V_dd /2. A five-stage ring oscillator is also demonstrated.

Original language	English
Article number	5594615
Pages (from-to)	1311-1313
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	11
DOIs	https://doi.org/10.1109/LED.2010.2070483
Publication status	Published - Nov 2010
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Circuits
CMOS
inkjet
organic

Access to Document

10.1109/LED.2010.2070483

Cite this

@article{7ff3b8923c654f878103a92692127d59,

title = "Complementary organic circuits using evaporated F16CuPc and inkjet printing of PQT",

abstract = "Organic complementary inverters and ring oscillators are fabricated using a unique combination of inkjet printing and evaporation of organic semiconductors. p-Type poly (3, 3′-didodecylquaterthiophene) (PQT) is inkjet printed, after which n-type copper hexadecafluorophthalocyanine (F 16CuPc) is evaporated and patterned by shadow masking. A solution-processable bilayer gate dielectric with superior gate leakage characteristics and a simplified process stack is implemented. The inverters show a high noise margin, good gain characteristics, and a switching point close to Vdd /2. A five-stage ring oscillator is also demonstrated.",

keywords = "Circuits, CMOS, inkjet, organic",

author = "Tan, \{H. S.\} and Wang, \{B. C.\} and S. Kamath and J. Chua and M. Shojaei-Baghini and Rao, \{V. R.\} and N. Mathews and Mhaisalkar, \{S. G.\}",

year = "2010",

month = nov,

doi = "10.1109/LED.2010.2070483",

language = "English",

volume = "31",

pages = "1311--1313",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - Complementary organic circuits using evaporated F16CuPc and inkjet printing of PQT

AU - Tan, H. S.

AU - Wang, B. C.

AU - Kamath, S.

AU - Chua, J.

AU - Shojaei-Baghini, M.

AU - Rao, V. R.

AU - Mathews, N.

AU - Mhaisalkar, S. G.

PY - 2010/11

Y1 - 2010/11

N2 - Organic complementary inverters and ring oscillators are fabricated using a unique combination of inkjet printing and evaporation of organic semiconductors. p-Type poly (3, 3′-didodecylquaterthiophene) (PQT) is inkjet printed, after which n-type copper hexadecafluorophthalocyanine (F 16CuPc) is evaporated and patterned by shadow masking. A solution-processable bilayer gate dielectric with superior gate leakage characteristics and a simplified process stack is implemented. The inverters show a high noise margin, good gain characteristics, and a switching point close to Vdd /2. A five-stage ring oscillator is also demonstrated.

AB - Organic complementary inverters and ring oscillators are fabricated using a unique combination of inkjet printing and evaporation of organic semiconductors. p-Type poly (3, 3′-didodecylquaterthiophene) (PQT) is inkjet printed, after which n-type copper hexadecafluorophthalocyanine (F 16CuPc) is evaporated and patterned by shadow masking. A solution-processable bilayer gate dielectric with superior gate leakage characteristics and a simplified process stack is implemented. The inverters show a high noise margin, good gain characteristics, and a switching point close to Vdd /2. A five-stage ring oscillator is also demonstrated.

KW - Circuits

KW - CMOS

KW - inkjet

KW - organic

UR - http://www.scopus.com/inward/record.url?scp=78049275358&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78049275358&partnerID=8YFLogxK

U2 - 10.1109/LED.2010.2070483

DO - 10.1109/LED.2010.2070483

M3 - Article

AN - SCOPUS:78049275358

SN - 0741-3106

VL - 31

SP - 1311

EP - 1313

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

M1 - 5594615

ER -