Composition-tunable vertically aligned CdSxSe1-x nanowire arrays via van der Waals epitaxy: Investigation of optical properties and photocatalytic behavior

Jun Pan; Muhammad Iqbal Bakti Utama; Qing Zhang; Xinfeng Liu; Bo Peng; Lai Mun Wong; Tze Chien Sum; Shijie Wang; Qihua Xiong

doi:10.1002/adma.201104996

Composition-tunable vertically aligned CdS_xSe_1-x nanowire arrays via van der Waals epitaxy: Investigation of optical properties and photocatalytic behavior

Jun Pan, Muhammad Iqbal Bakti Utama, Qing Zhang, Xinfeng Liu, Bo Peng, Lai Mun Wong, Tze Chien Sum, Shijie Wang, Qihua Xiong^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

73 Citations (Scopus)

Abstract

The growth of CdS_xSe_1-x (0 < x < 1) nanowire arrays are demonstrated for the first time with the vapor transport method on a muscovite substrate. The results of our characterizations show that our facile growth method enables accurate composition adjustability for the modulation of the crystalline, optical, and photocatalytic properties of the alloy nanowire arrays.

Original language	English
Pages (from-to)	4151-4156
Number of pages	6
Journal	Advanced Materials
Volume	24
Issue number	30
DOIs	https://doi.org/10.1002/adma.201104996
Publication status	Published - Aug 8 2012
Externally published	Yes

ASJC Scopus Subject Areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

Keywords

nanowire array
optical property
photocatalysis
ternary alloy
van der Waals epitaxy

Access to Document

10.1002/adma.201104996

Cite this

@article{a9511f3ef01e4d3b84ff3cdde17492be,

title = "Composition-tunable vertically aligned CdSxSe1-x nanowire arrays via van der Waals epitaxy: Investigation of optical properties and photocatalytic behavior",

abstract = "The growth of CdSxSe1-x (0 < x < 1) nanowire arrays are demonstrated for the first time with the vapor transport method on a muscovite substrate. The results of our characterizations show that our facile growth method enables accurate composition adjustability for the modulation of the crystalline, optical, and photocatalytic properties of the alloy nanowire arrays.",

keywords = "nanowire array, optical property, photocatalysis, ternary alloy, van der Waals epitaxy",

author = "Jun Pan and Utama, {Muhammad Iqbal Bakti} and Qing Zhang and Xinfeng Liu and Bo Peng and Wong, {Lai Mun} and Sum, {Tze Chien} and Shijie Wang and Qihua Xiong",

year = "2012",

month = aug,

day = "8",

doi = "10.1002/adma.201104996",

language = "English",

volume = "24",

pages = "4151--4156",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "30",

}

TY - JOUR

T1 - Composition-tunable vertically aligned CdSxSe1-x nanowire arrays via van der Waals epitaxy

T2 - Investigation of optical properties and photocatalytic behavior

AU - Pan, Jun

AU - Utama, Muhammad Iqbal Bakti

AU - Zhang, Qing

AU - Liu, Xinfeng

AU - Peng, Bo

AU - Wong, Lai Mun

AU - Sum, Tze Chien

AU - Wang, Shijie

AU - Xiong, Qihua

PY - 2012/8/8

Y1 - 2012/8/8

N2 - The growth of CdSxSe1-x (0 < x < 1) nanowire arrays are demonstrated for the first time with the vapor transport method on a muscovite substrate. The results of our characterizations show that our facile growth method enables accurate composition adjustability for the modulation of the crystalline, optical, and photocatalytic properties of the alloy nanowire arrays.

AB - The growth of CdSxSe1-x (0 < x < 1) nanowire arrays are demonstrated for the first time with the vapor transport method on a muscovite substrate. The results of our characterizations show that our facile growth method enables accurate composition adjustability for the modulation of the crystalline, optical, and photocatalytic properties of the alloy nanowire arrays.

KW - nanowire array

KW - optical property

KW - photocatalysis

KW - ternary alloy

KW - van der Waals epitaxy

UR - http://www.scopus.com/inward/record.url?scp=84864595857&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864595857&partnerID=8YFLogxK

U2 - 10.1002/adma.201104996

DO - 10.1002/adma.201104996

M3 - Article

C2 - 22588696

AN - SCOPUS:84864595857

SN - 0935-9648

VL - 24

SP - 4151

EP - 4156

JO - Advanced Materials

JF - Advanced Materials

IS - 30

ER -