Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices

Hong Wang, Yuanmin Du, Yingtao Li, Bowen Zhu, Wan Ru Leow, Yuangang Li, Jisheng Pan, Tao Wu*, Xiaodong Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

187 Citations (Scopus)

Abstract

The employ of natural biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and green electronics. Here, resistive switching (RS) devices based on naturally silk protein with configurable functionality are demonstrated. The RS type of the devices can be effectively and exactly controlled by controlling the compliance current in the set process. Memory RS can be triggered by a higher compliance current, while threshold RS can be triggered by a lower compliance current. Furthermore, two types of memory devices, working in random access and WORM modes, can be achieved with the RS effect. The results suggest that silk protein possesses the potential for sustainable electronics and data storage. In addition, this finding would provide important guidelines for the performance optimization of biomaterials based memory devices and the study of the underlying mechanism behind the RS effect arising from biomaterials.

Original languageEnglish
Pages (from-to)3825-3831
Number of pages7
JournalAdvanced Functional Materials
Volume25
Issue number25
DOIs
Publication statusPublished - Jul 1 2015
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • General Chemistry
  • Biomaterials
  • General Materials Science
  • Condensed Matter Physics
  • Electrochemistry

Keywords

  • electronic devices
  • memory
  • proteins
  • resistive switching
  • threshold

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