Controlled Gas Molecules Doping of Monolayer MoS2 via Atomic-Layer-Deposited Al2O3 Films

Yuanzheng Li; Xinshu Li; Heyu Chen; Jia Shi; Qiuyu Shang; Shuai Zhang; Xiaohui Qiu; Zheng Liu; Qing Zhang; Haiyang Xu; Weizhen Liu; Xinfeng Liu; Yichun Liu

doi:10.1021/acsami.7b08893

Controlled Gas Molecules Doping of Monolayer MoS₂ via Atomic-Layer-Deposited Al₂O₃ Films

Yuanzheng Li, Xinshu Li, Heyu Chen, Jia Shi, Qiuyu Shang, Shuai Zhang, Xiaohui Qiu, Zheng Liu, Qing Zhang, Haiyang Xu^*, Weizhen Liu, Xinfeng Liu, Yichun Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

MoS₂ as atomically thin semiconductor is highly sensitive to ambient atmosphere (e.g., oxygen, moisture, etc.) in optical and electrical properties. Here we report a controlled gas molecules doping of monolayer MoS₂ via atomic-layer-deposited Al₂O₃ films. The deposited Al₂O₃ films, in the shape of nanospheres, can effectively control the contact areas between ambient atmosphere and MoS₂ that allows precise modulation of gas molecules doping. By analyzing photoluminescence (PL) emission spectra of MoS₂ with different thickness of Al₂O₃, the doped carrier concentration is estimated at ∼2.7 × 10¹³ cm^-2 based on the mass action model. Moreover, time-dependent PL measurements indicate an incremental stability of single layer MoS₂ as the thicknesses of Al₂O₃ capping layer increase. Effective control of gas molecules doping in monolayer MoS₂ provides us a valuable insight into the applications of MoS₂ based optical and electrical devices.

Original language	English
Pages (from-to)	27402-27408
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	9
Issue number	33
DOIs	https://doi.org/10.1021/acsami.7b08893
Publication status	Published - Aug 23 2017
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2017 American Chemical Society.

ASJC Scopus Subject Areas

General Materials Science

Keywords

AlO
aomic layer deposition (ALD)
gas molecules doping
monolayer MoS
stability

Access to Document

10.1021/acsami.7b08893

Cite this

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title = "Controlled Gas Molecules Doping of Monolayer MoS2 via Atomic-Layer-Deposited Al2O3 Films",

abstract = "MoS2 as atomically thin semiconductor is highly sensitive to ambient atmosphere (e.g., oxygen, moisture, etc.) in optical and electrical properties. Here we report a controlled gas molecules doping of monolayer MoS2 via atomic-layer-deposited Al2O3 films. The deposited Al2O3 films, in the shape of nanospheres, can effectively control the contact areas between ambient atmosphere and MoS2 that allows precise modulation of gas molecules doping. By analyzing photoluminescence (PL) emission spectra of MoS2 with different thickness of Al2O3, the doped carrier concentration is estimated at ∼2.7 × 1013 cm-2 based on the mass action model. Moreover, time-dependent PL measurements indicate an incremental stability of single layer MoS2 as the thicknesses of Al2O3 capping layer increase. Effective control of gas molecules doping in monolayer MoS2 provides us a valuable insight into the applications of MoS2 based optical and electrical devices.",

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AU - Li, Yuanzheng

AU - Li, Xinshu

AU - Chen, Heyu

AU - Shi, Jia

AU - Shang, Qiuyu

AU - Zhang, Shuai

AU - Qiu, Xiaohui

AU - Liu, Zheng

AU - Zhang, Qing

AU - Xu, Haiyang

AU - Liu, Weizhen

AU - Liu, Xinfeng

AU - Liu, Yichun

PY - 2017/8/23

Y1 - 2017/8/23

N2 - MoS2 as atomically thin semiconductor is highly sensitive to ambient atmosphere (e.g., oxygen, moisture, etc.) in optical and electrical properties. Here we report a controlled gas molecules doping of monolayer MoS2 via atomic-layer-deposited Al2O3 films. The deposited Al2O3 films, in the shape of nanospheres, can effectively control the contact areas between ambient atmosphere and MoS2 that allows precise modulation of gas molecules doping. By analyzing photoluminescence (PL) emission spectra of MoS2 with different thickness of Al2O3, the doped carrier concentration is estimated at ∼2.7 × 1013 cm-2 based on the mass action model. Moreover, time-dependent PL measurements indicate an incremental stability of single layer MoS2 as the thicknesses of Al2O3 capping layer increase. Effective control of gas molecules doping in monolayer MoS2 provides us a valuable insight into the applications of MoS2 based optical and electrical devices.

AB - MoS2 as atomically thin semiconductor is highly sensitive to ambient atmosphere (e.g., oxygen, moisture, etc.) in optical and electrical properties. Here we report a controlled gas molecules doping of monolayer MoS2 via atomic-layer-deposited Al2O3 films. The deposited Al2O3 films, in the shape of nanospheres, can effectively control the contact areas between ambient atmosphere and MoS2 that allows precise modulation of gas molecules doping. By analyzing photoluminescence (PL) emission spectra of MoS2 with different thickness of Al2O3, the doped carrier concentration is estimated at ∼2.7 × 1013 cm-2 based on the mass action model. Moreover, time-dependent PL measurements indicate an incremental stability of single layer MoS2 as the thicknesses of Al2O3 capping layer increase. Effective control of gas molecules doping in monolayer MoS2 provides us a valuable insight into the applications of MoS2 based optical and electrical devices.

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KW - monolayer MoS

KW - stability

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