Crystallinity, the surface morphology and the optical constant of sol-gel derived thin films of BaTiO3 on SiO2/Si and Si substrates

K. Pita; S. D. Cheng; C. H. Kam; Y. Zhou; Y. L. Lam; Y. C. Chan

doi:10.1080/00150199908014513

Crystallinity, the surface morphology and the optical constant of sol-gel derived thin films of BaTiO₃ on SiO₂/Si and Si substrates

K. Pita^*, S. D. Cheng, C. H. Kam, Y. Zhou, Y. L. Lam, Y. C. Chan

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Thin films of BaTiO₃ are deposited on SiO₂/Si and Si through the sol-gel route. The films are characterized by means of X-ray diffraction, atomic force microscopy, and variable angle spectroscopic ellipsometry. The experiment results show that the 700°C annealed film crystallizes into the perovskite BaTiO₃ phase and it has a relatively smooth surface and high refractive index, which makes it a possible candidate for electro-optic applications such as dielectrics for electroluminescence and optical waveguide devices.

Original language	English
Pages (from-to)	67-72
Number of pages	6
Journal	Ferroelectrics
Volume	231
Issue number	1 -4 pt 3
DOIs	https://doi.org/10.1080/00150199908014513
Publication status	Published - 1999
Externally published	Yes
Event	Proceedings of the 1998 2nd Asian Meeting on Ferrroelectricity (AMF-2) - Singapore, Singapore Duration: Dec 7 1998 → Dec 11 1998

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1080/00150199908014513

Cite this

@article{400c57af7b7241eaa97924791d31f2e4,

title = "Crystallinity, the surface morphology and the optical constant of sol-gel derived thin films of BaTiO3 on SiO2/Si and Si substrates",

abstract = "Thin films of BaTiO3 are deposited on SiO2/Si and Si through the sol-gel route. The films are characterized by means of X-ray diffraction, atomic force microscopy, and variable angle spectroscopic ellipsometry. The experiment results show that the 700°C annealed film crystallizes into the perovskite BaTiO3 phase and it has a relatively smooth surface and high refractive index, which makes it a possible candidate for electro-optic applications such as dielectrics for electroluminescence and optical waveguide devices.",

author = "K. Pita and Cheng, {S. D.} and Kam, {C. H.} and Y. Zhou and Lam, {Y. L.} and Chan, {Y. C.}",

year = "1999",

doi = "10.1080/00150199908014513",

language = "English",

volume = "231",

pages = "67--72",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

number = "1 -4 pt 3",

note = "Proceedings of the 1998 2nd Asian Meeting on Ferrroelectricity (AMF-2) ; Conference date: 07-12-1998 Through 11-12-1998",

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TY - JOUR

T1 - Crystallinity, the surface morphology and the optical constant of sol-gel derived thin films of BaTiO3 on SiO2/Si and Si substrates

AU - Pita, K.

AU - Cheng, S. D.

AU - Kam, C. H.

AU - Zhou, Y.

AU - Lam, Y. L.

AU - Chan, Y. C.

PY - 1999

Y1 - 1999

N2 - Thin films of BaTiO3 are deposited on SiO2/Si and Si through the sol-gel route. The films are characterized by means of X-ray diffraction, atomic force microscopy, and variable angle spectroscopic ellipsometry. The experiment results show that the 700°C annealed film crystallizes into the perovskite BaTiO3 phase and it has a relatively smooth surface and high refractive index, which makes it a possible candidate for electro-optic applications such as dielectrics for electroluminescence and optical waveguide devices.

AB - Thin films of BaTiO3 are deposited on SiO2/Si and Si through the sol-gel route. The films are characterized by means of X-ray diffraction, atomic force microscopy, and variable angle spectroscopic ellipsometry. The experiment results show that the 700°C annealed film crystallizes into the perovskite BaTiO3 phase and it has a relatively smooth surface and high refractive index, which makes it a possible candidate for electro-optic applications such as dielectrics for electroluminescence and optical waveguide devices.

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DO - 10.1080/00150199908014513

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VL - 231

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EP - 72

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1 -4 pt 3

T2 - Proceedings of the 1998 2nd Asian Meeting on Ferrroelectricity (AMF-2)

Y2 - 7 December 1998 through 11 December 1998