Crystallization and thermal stability of Sn-doped Ge2Sb 2Te5 phase change material

Mei Ling Lee; Kok Thong Yong; Chee Lip Gan; Lee Hou Ting; Sofian Bin Muhamad Daud; L. P. Shi

doi:10.1088/0022-3727/41/21/215402

Crystallization and thermal stability of Sn-doped Ge₂Sb ₂Te₅ phase change material

Mei Ling Lee, Kok Thong Yong, Chee Lip Gan, Lee Hou Ting, Sofian Bin Muhamad Daud, L. P. Shi

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

The influence of Sn doping on the crystallization and thermal stability of Ge₂Sb₂Te₅ phase change material was studied. Thermal analysis shows that the phase change of Sn_7.0Ge _20.6Sb_20.7Te_51.7 occurs slightly higher than that of Ge₂Sb₂Te₅ at 154 °C and has a lower melting point at 536 °C. The activation energy for crystallization for this material is also higher. It has a face-centred-cubic crystal structure. A fast crystallization speed of 60 ns is realized upon irradiation by a blue laser beam of 405 nm. The use of the Sn_7.0Ge_20.6Sb _20.7Te_51.7 phase change material as a mask layer in aperture-type super-resolution near-field phase change disk is realized to increase the carrier-to-noise ratio and thermal stability.

Original language	English
Article number	215402
Journal	Journal Physics D: Applied Physics
Volume	41
Issue number	21
DOIs	https://doi.org/10.1088/0022-3727/41/21/215402
Publication status	Published - Nov 7 2008
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/41/21/215402

Cite this

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title = "Crystallization and thermal stability of Sn-doped Ge2Sb 2Te5 phase change material",

abstract = "The influence of Sn doping on the crystallization and thermal stability of Ge2Sb2Te5 phase change material was studied. Thermal analysis shows that the phase change of Sn7.0Ge 20.6Sb20.7Te51.7 occurs slightly higher than that of Ge2Sb2Te5 at 154 °C and has a lower melting point at 536 °C. The activation energy for crystallization for this material is also higher. It has a face-centred-cubic crystal structure. A fast crystallization speed of 60 ns is realized upon irradiation by a blue laser beam of 405 nm. The use of the Sn7.0Ge20.6Sb 20.7Te51.7 phase change material as a mask layer in aperture-type super-resolution near-field phase change disk is realized to increase the carrier-to-noise ratio and thermal stability.",

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AU - Lee, Mei Ling

AU - Yong, Kok Thong

AU - Gan, Chee Lip

AU - Ting, Lee Hou

AU - Muhamad Daud, Sofian Bin

AU - Shi, L. P.

PY - 2008/11/7

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N2 - The influence of Sn doping on the crystallization and thermal stability of Ge2Sb2Te5 phase change material was studied. Thermal analysis shows that the phase change of Sn7.0Ge 20.6Sb20.7Te51.7 occurs slightly higher than that of Ge2Sb2Te5 at 154 °C and has a lower melting point at 536 °C. The activation energy for crystallization for this material is also higher. It has a face-centred-cubic crystal structure. A fast crystallization speed of 60 ns is realized upon irradiation by a blue laser beam of 405 nm. The use of the Sn7.0Ge20.6Sb 20.7Te51.7 phase change material as a mask layer in aperture-type super-resolution near-field phase change disk is realized to increase the carrier-to-noise ratio and thermal stability.

AB - The influence of Sn doping on the crystallization and thermal stability of Ge2Sb2Te5 phase change material was studied. Thermal analysis shows that the phase change of Sn7.0Ge 20.6Sb20.7Te51.7 occurs slightly higher than that of Ge2Sb2Te5 at 154 °C and has a lower melting point at 536 °C. The activation energy for crystallization for this material is also higher. It has a face-centred-cubic crystal structure. A fast crystallization speed of 60 ns is realized upon irradiation by a blue laser beam of 405 nm. The use of the Sn7.0Ge20.6Sb 20.7Te51.7 phase change material as a mask layer in aperture-type super-resolution near-field phase change disk is realized to increase the carrier-to-noise ratio and thermal stability.

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Crystallization and thermal stability of Sn-doped Ge₂Sb ₂Te₅ phase change material

Abstract

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