Current-induced self-switching of perpendicular magnetization in CoPt single layer

Liang Liu; Chenghang Zhou; Tieyang Zhao; Bingqing Yao; Jing Zhou; Xinyu Shu; Shaohai Chen; Shu Shi; Shibo Xi; Da Lan; Weinan Lin; Qidong Xie; Lizhu Ren; Zhaoyang Luo; Chao Sun; Ping Yang; Er Jia Guo; Zhili Dong; Aurelien Manchon; Jingsheng Chen

doi:10.1038/s41467-022-31167-w

Current-induced self-switching of perpendicular magnetization in CoPt single layer

Liang Liu, Chenghang Zhou, Tieyang Zhao, Bingqing Yao, Jing Zhou, Xinyu Shu, Shaohai Chen, Shu Shi, Shibo Xi, Da Lan, Weinan Lin, Qidong Xie, Lizhu Ren, Zhaoyang Luo, Chao Sun, Ping Yang, Er Jia Guo, Zhili Dong, Aurelien Manchon, Jingsheng Chen^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

73 Citations (Scopus)

Abstract

All-electric switching of perpendicular magnetization is a prerequisite for the integration of fast, high-density, and low-power magnetic memories and magnetic logic devices into electric circuits. To date, the field-free spin-orbit torque (SOT) switching of perpendicular magnetization has been observed in SOT bilayer and trilayer systems through various asymmetric designs, which mainly aim to break the mirror symmetry. Here, we report that the perpendicular magnetization of Co_xPt_100-x single layers within a special composition range (20 < x < 56) can be deterministically switched by electrical current in the absence of external magnetic field. Specifically, the Co₃₀Pt₇₀ shows the largest out-of-plane effective field efficiency and best switching performance. We demonstrate that this unique property arises from the cooperation of two structural mechanisms: the low crystal symmetry property at the Co platelet/Pt interfaces and the composition gradient along the thickness direction. Compared with that in bilayers or trilayers, the field-free switching in Co_xPt_100-x single layer greatly simplifies the SOT structure and avoids additional asymmetric designs.

Original language	English
Article number	3539
Journal	Nature Communications
Volume	13
Issue number	1
DOIs	https://doi.org/10.1038/s41467-022-31167-w
Publication status	Published - Dec 2022
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2022, The Author(s).

ASJC Scopus Subject Areas

General Chemistry
General Biochemistry,Genetics and Molecular Biology
General Physics and Astronomy

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Liu, L., Zhou, C., Zhao, T., Yao, B., Zhou, J., Shu, X., Chen, S., Shi, S., Xi, S., Lan, D., Lin, W., Xie, Q., Ren, L., Luo, Z., Sun, C., Yang, P., Guo, E. J., Dong, Z., Manchon, A., & Chen, J. (2022). Current-induced self-switching of perpendicular magnetization in CoPt single layer. Nature Communications, 13(1), Article 3539. https://doi.org/10.1038/s41467-022-31167-w

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abstract = "All-electric switching of perpendicular magnetization is a prerequisite for the integration of fast, high-density, and low-power magnetic memories and magnetic logic devices into electric circuits. To date, the field-free spin-orbit torque (SOT) switching of perpendicular magnetization has been observed in SOT bilayer and trilayer systems through various asymmetric designs, which mainly aim to break the mirror symmetry. Here, we report that the perpendicular magnetization of CoxPt100-x single layers within a special composition range (20 < x < 56) can be deterministically switched by electrical current in the absence of external magnetic field. Specifically, the Co30Pt70 shows the largest out-of-plane effective field efficiency and best switching performance. We demonstrate that this unique property arises from the cooperation of two structural mechanisms: the low crystal symmetry property at the Co platelet/Pt interfaces and the composition gradient along the thickness direction. Compared with that in bilayers or trilayers, the field-free switching in CoxPt100-x single layer greatly simplifies the SOT structure and avoids additional asymmetric designs.",

author = "Liang Liu and Chenghang Zhou and Tieyang Zhao and Bingqing Yao and Jing Zhou and Xinyu Shu and Shaohai Chen and Shu Shi and Shibo Xi and Da Lan and Weinan Lin and Qidong Xie and Lizhu Ren and Zhaoyang Luo and Chao Sun and Ping Yang and Guo, {Er Jia} and Zhili Dong and Aurelien Manchon and Jingsheng Chen",

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AU - Zhou, Chenghang

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AU - Yao, Bingqing

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AU - Shu, Xinyu

AU - Chen, Shaohai

AU - Shi, Shu

AU - Xi, Shibo

AU - Lan, Da

AU - Lin, Weinan

AU - Xie, Qidong

AU - Ren, Lizhu

AU - Luo, Zhaoyang

AU - Sun, Chao

AU - Yang, Ping

AU - Guo, Er Jia

AU - Dong, Zhili

AU - Manchon, Aurelien

AU - Chen, Jingsheng

PY - 2022/12

Y1 - 2022/12

N2 - All-electric switching of perpendicular magnetization is a prerequisite for the integration of fast, high-density, and low-power magnetic memories and magnetic logic devices into electric circuits. To date, the field-free spin-orbit torque (SOT) switching of perpendicular magnetization has been observed in SOT bilayer and trilayer systems through various asymmetric designs, which mainly aim to break the mirror symmetry. Here, we report that the perpendicular magnetization of CoxPt100-x single layers within a special composition range (20 < x < 56) can be deterministically switched by electrical current in the absence of external magnetic field. Specifically, the Co30Pt70 shows the largest out-of-plane effective field efficiency and best switching performance. We demonstrate that this unique property arises from the cooperation of two structural mechanisms: the low crystal symmetry property at the Co platelet/Pt interfaces and the composition gradient along the thickness direction. Compared with that in bilayers or trilayers, the field-free switching in CoxPt100-x single layer greatly simplifies the SOT structure and avoids additional asymmetric designs.

AB - All-electric switching of perpendicular magnetization is a prerequisite for the integration of fast, high-density, and low-power magnetic memories and magnetic logic devices into electric circuits. To date, the field-free spin-orbit torque (SOT) switching of perpendicular magnetization has been observed in SOT bilayer and trilayer systems through various asymmetric designs, which mainly aim to break the mirror symmetry. Here, we report that the perpendicular magnetization of CoxPt100-x single layers within a special composition range (20 < x < 56) can be deterministically switched by electrical current in the absence of external magnetic field. Specifically, the Co30Pt70 shows the largest out-of-plane effective field efficiency and best switching performance. We demonstrate that this unique property arises from the cooperation of two structural mechanisms: the low crystal symmetry property at the Co platelet/Pt interfaces and the composition gradient along the thickness direction. Compared with that in bilayers or trilayers, the field-free switching in CoxPt100-x single layer greatly simplifies the SOT structure and avoids additional asymmetric designs.

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Current-induced self-switching of perpendicular magnetization in CoPt single layer

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