Abstract
ZnO films were prepared by filtered cathodic vacuum arc technique with Zn target at different substrate temperatures. The crystallinity is enhanced with increasing substrate temperature and preferably oriented at (1 0 3) direction when the substrate temperature is higher than 230°C. The PL emission corresponding to the exciton transition at 3.37 eV can be observed at room temperature, which indicates that high-quality films have been obtained by this technique. The Hall mobility, which increases with substrate temperature, is dominated by grain boundary scattering.
Original language | English |
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Pages (from-to) | 617-620 |
Number of pages | 4 |
Journal | Materials Science in Semiconductor Processing |
Volume | 4 |
Issue number | 6 |
DOIs | |
Publication status | Published - Dec 2001 |
Externally published | Yes |
ASJC Scopus Subject Areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Keywords
- Filtered cathodic vacuum arc
- Photoluminescence
- Zinc oxide films