Deposition and characterization of Er+3-doped, Al co-doped sol-gel silica films on SOS

Q. Xiang; Y. Zhou; Y. L. Lam; Y. C. Chan; C. H. Kam

doi:10.1080/00150199908214898

Deposition and characterization of Er⁺³-doped, Al co-doped sol-gel silica films on SOS

Q. Xiang^*, Y. Zhou, Y. L. Lam, Y. C. Chan, C. H. Kam

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Up to 18 layers of crack-free Er-doped sol-gel silica films co-doped with Al were deposited on SOS (silica on silicon) by multiple spin-coating and rapid thermal processing (RTP). The properties of the films were studied using ellipsometry, FTIR (Fourier Transform Infrared) Spectroscopy, AFM (atomic force microscopy) and XRD (X-ray diffraction). The results showed that, compared with air environment, a moderate (45-50 mbar) vacuum annealing environment could remove water molecules (H₂O) in the prepared film more effectively and yield smoother film surface.

Original language	English
Pages (from-to)	55-60
Number of pages	6
Journal	Ferroelectrics
Volume	230
Issue number	1 -4 pt 2
DOIs	https://doi.org/10.1080/00150199908214898
Publication status	Published - 1999
Externally published	Yes
Event	Proceedings of the 1998 2nd Asian Meeting on Ferrroelectricity (AMF-2) - Singapore, Singapore Duration: Dec 7 1998 → Dec 11 1998

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1080/00150199908214898

Cite this

@article{943bcdd205a1486498132b9cf1474bad,

title = "Deposition and characterization of Er+3-doped, Al co-doped sol-gel silica films on SOS",

abstract = "Up to 18 layers of crack-free Er-doped sol-gel silica films co-doped with Al were deposited on SOS (silica on silicon) by multiple spin-coating and rapid thermal processing (RTP). The properties of the films were studied using ellipsometry, FTIR (Fourier Transform Infrared) Spectroscopy, AFM (atomic force microscopy) and XRD (X-ray diffraction). The results showed that, compared with air environment, a moderate (45-50 mbar) vacuum annealing environment could remove water molecules (H2O) in the prepared film more effectively and yield smoother film surface.",

author = "Q. Xiang and Y. Zhou and Lam, {Y. L.} and Chan, {Y. C.} and Kam, {C. H.}",

year = "1999",

doi = "10.1080/00150199908214898",

language = "English",

volume = "230",

pages = "55--60",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

number = "1 -4 pt 2",

note = "Proceedings of the 1998 2nd Asian Meeting on Ferrroelectricity (AMF-2) ; Conference date: 07-12-1998 Through 11-12-1998",

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TY - JOUR

T1 - Deposition and characterization of Er+3-doped, Al co-doped sol-gel silica films on SOS

AU - Xiang, Q.

AU - Zhou, Y.

AU - Lam, Y. L.

AU - Chan, Y. C.

AU - Kam, C. H.

PY - 1999

Y1 - 1999

N2 - Up to 18 layers of crack-free Er-doped sol-gel silica films co-doped with Al were deposited on SOS (silica on silicon) by multiple spin-coating and rapid thermal processing (RTP). The properties of the films were studied using ellipsometry, FTIR (Fourier Transform Infrared) Spectroscopy, AFM (atomic force microscopy) and XRD (X-ray diffraction). The results showed that, compared with air environment, a moderate (45-50 mbar) vacuum annealing environment could remove water molecules (H2O) in the prepared film more effectively and yield smoother film surface.

AB - Up to 18 layers of crack-free Er-doped sol-gel silica films co-doped with Al were deposited on SOS (silica on silicon) by multiple spin-coating and rapid thermal processing (RTP). The properties of the films were studied using ellipsometry, FTIR (Fourier Transform Infrared) Spectroscopy, AFM (atomic force microscopy) and XRD (X-ray diffraction). The results showed that, compared with air environment, a moderate (45-50 mbar) vacuum annealing environment could remove water molecules (H2O) in the prepared film more effectively and yield smoother film surface.

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DO - 10.1080/00150199908214898

M3 - Conference article

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SN - 0015-0193

VL - 230

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EP - 60

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1 -4 pt 2

T2 - Proceedings of the 1998 2nd Asian Meeting on Ferrroelectricity (AMF-2)

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