Deposition and gas sensing properties of tin oxide thin films by inductively coupled plasma chemical vapor deposition

Y. C. Lee^*, O. K. Tan, H. Huang, M. S. Tse

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Tin oxide thin films have been deposited by a custom-designed inductively coupled plasma chemical vapor deposition (ICP-CVD) system in order to explore its application as an alternative approach for thin film gas sensor preparation. The as-deposited SnO₂ films were of polycrystalline structure with nano-size grains of 12 nm. The SnO₂ films exhibited a maximum sensitivity of 43 to 1000 ppm H₂ at an optimum operating temperature of 350°C. The response time of the SnO₂ films was 12 s and full recovery was achievable.

Original language	English
Pages (from-to)	507-509
Number of pages	3
Journal	Journal of Electroceramics
Volume	16
Issue number	4
DOIs	https://doi.org/10.1007/s10832-006-9907-z
Publication status	Published - Jul 2006
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Mechanics of Materials
Materials Chemistry
Electrical and Electronic Engineering

Keywords

Chemical vapor deposition
Gas sensing
Tin oxide

Access to Document

10.1007/s10832-006-9907-z

Cite this

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title = "Deposition and gas sensing properties of tin oxide thin films by inductively coupled plasma chemical vapor deposition",

abstract = "Tin oxide thin films have been deposited by a custom-designed inductively coupled plasma chemical vapor deposition (ICP-CVD) system in order to explore its application as an alternative approach for thin film gas sensor preparation. The as-deposited SnO2 films were of polycrystalline structure with nano-size grains of 12 nm. The SnO2 films exhibited a maximum sensitivity of 43 to 1000 ppm H2 at an optimum operating temperature of 350°C. The response time of the SnO2 films was 12 s and full recovery was achievable.",

keywords = "Chemical vapor deposition, Gas sensing, Tin oxide",

author = "Lee, {Y. C.} and Tan, {O. K.} and H. Huang and Tse, {M. S.}",

year = "2006",

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T1 - Deposition and gas sensing properties of tin oxide thin films by inductively coupled plasma chemical vapor deposition

AU - Lee, Y. C.

AU - Tan, O. K.

AU - Huang, H.

AU - Tse, M. S.

PY - 2006/7

Y1 - 2006/7

N2 - Tin oxide thin films have been deposited by a custom-designed inductively coupled plasma chemical vapor deposition (ICP-CVD) system in order to explore its application as an alternative approach for thin film gas sensor preparation. The as-deposited SnO2 films were of polycrystalline structure with nano-size grains of 12 nm. The SnO2 films exhibited a maximum sensitivity of 43 to 1000 ppm H2 at an optimum operating temperature of 350°C. The response time of the SnO2 films was 12 s and full recovery was achievable.

AB - Tin oxide thin films have been deposited by a custom-designed inductively coupled plasma chemical vapor deposition (ICP-CVD) system in order to explore its application as an alternative approach for thin film gas sensor preparation. The as-deposited SnO2 films were of polycrystalline structure with nano-size grains of 12 nm. The SnO2 films exhibited a maximum sensitivity of 43 to 1000 ppm H2 at an optimum operating temperature of 350°C. The response time of the SnO2 films was 12 s and full recovery was achievable.

KW - Chemical vapor deposition

KW - Gas sensing

KW - Tin oxide

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