Abstract
Recently, it was found that gas sensitivity of the metal-oxide semiconductor material used for gas sensor application increases drastically wit the decrease of the grain size in nano-scale. As such, a unique single-source sol-gel inductively-coupled plasma chemical vapor deposition (ICP-CVD) system to synthesize nano-scale metal-oxide materials as sensing layers on silicon for fabrication into gas sensors was proposed. This paper presents the preliminary results of the deposited film's material properties of tin-oxide which will be characterized as a function of ICP power, chamber pressure, gas chemistry, gas flow rate, substrate temperature, and dc bias grid configuration.
| Original language | English |
|---|---|
| Pages (from-to) | 134 |
| Number of pages | 1 |
| Journal | IEEE International Conference on Plasma Science |
| Publication status | Published - 2002 |
| Externally published | Yes |
| Event | 2002 IEEE International Conference on plasma Science - Banff, Alta., Canada Duration: May 26 2002 → May 30 2002 |
ASJC Scopus Subject Areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering