Deposition of nitrogen doped tetrahedral amorphous carbon (ta-C:N) films by ion beam assisted filtered cathodic vacuum arc

L. K. Cheah; Xu Shi; B. K. Tay

doi:10.1049/el:19970901

Deposition of nitrogen doped tetrahedral amorphous carbon (ta-C:N) films by ion beam assisted filtered cathodic vacuum arc

L. K. Cheah^*, Xu Shi, B. K. Tay

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

An alternative approach to deposit ta-C:N films by ion assisted filtered cathodic vacuum arc (IAFCVA) is presented and compared with ta-C films prepared by FCVA under nitrogen partial pressure. The electronic properties are strongly dependent on nitrogen partial pressure for both methods although the efficiency of doping is higher for IAFCVA.

Original language	English
Pages (from-to)	1339-1340
Number of pages	2
Journal	Electronics Letters
Volume	33
Issue number	15
DOIs	https://doi.org/10.1049/el:19970901
Publication status	Published - Jul 17 1997
Externally published	Yes

ASJC Scopus Subject Areas

Electrical and Electronic Engineering

Keywords

Amorphous semiconductors
Ion beams

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10.1049/el:19970901

Cite this

@article{b4a3f3dd91a140a2b334c51bce6c82a2,

title = "Deposition of nitrogen doped tetrahedral amorphous carbon (ta-C:N) films by ion beam assisted filtered cathodic vacuum arc",

abstract = "An alternative approach to deposit ta-C:N films by ion assisted filtered cathodic vacuum arc (IAFCVA) is presented and compared with ta-C films prepared by FCVA under nitrogen partial pressure. The electronic properties are strongly dependent on nitrogen partial pressure for both methods although the efficiency of doping is higher for IAFCVA.",

keywords = "Amorphous semiconductors, Ion beams",

author = "Cheah, {L. K.} and Xu Shi and Tay, {B. K.}",

year = "1997",

month = jul,

day = "17",

doi = "10.1049/el:19970901",

language = "English",

volume = "33",

pages = "1339--1340",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "15",

}

TY - JOUR

T1 - Deposition of nitrogen doped tetrahedral amorphous carbon (ta-C:N) films by ion beam assisted filtered cathodic vacuum arc

AU - Cheah, L. K.

AU - Shi, Xu

AU - Tay, B. K.

PY - 1997/7/17

Y1 - 1997/7/17

N2 - An alternative approach to deposit ta-C:N films by ion assisted filtered cathodic vacuum arc (IAFCVA) is presented and compared with ta-C films prepared by FCVA under nitrogen partial pressure. The electronic properties are strongly dependent on nitrogen partial pressure for both methods although the efficiency of doping is higher for IAFCVA.

AB - An alternative approach to deposit ta-C:N films by ion assisted filtered cathodic vacuum arc (IAFCVA) is presented and compared with ta-C films prepared by FCVA under nitrogen partial pressure. The electronic properties are strongly dependent on nitrogen partial pressure for both methods although the efficiency of doping is higher for IAFCVA.

KW - Amorphous semiconductors

KW - Ion beams

UR - http://www.scopus.com/inward/record.url?scp=0031191129&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031191129&partnerID=8YFLogxK

U2 - 10.1049/el:19970901

DO - 10.1049/el:19970901

M3 - Article

AN - SCOPUS:0031191129

SN - 0013-5194

VL - 33

SP - 1339

EP - 1340

JO - Electronics Letters

JF - Electronics Letters

IS - 15

ER -

Deposition of nitrogen doped tetrahedral amorphous carbon (ta-C:N) films by ion beam assisted filtered cathodic vacuum arc

Abstract

ASJC Scopus Subject Areas

Keywords

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