Determination of Raman phonon strain shift coefficient of strained silicon and strained SiGe

L. H. Wong; C. C. Wong; J. P. Liu; D. K. Sohn; L. Chan; L. C. Hsia; H. Zang; Z. H. Ni; Z. X. Shen

doi:10.1143/JJAP.44.7922

Determination of Raman phonon strain shift coefficient of strained silicon and strained SiGe

L. H. Wong^*, C. C. Wong, J. P. Liu, D. K. Sohn, L. Chan, L. C. Hsia, H. Zang, Z. H. Ni, Z. X. Shen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

The use of Raman spectroscopy to characterize strain in strained Si and strained SiGe has been widely accepted. To use Raman spectroscopy for quantitative biaxial strain measurements, the strain shift coefficient for Si-Si vibration from strained Si (b_Si-Si^StSi) and strained SiGe (b_Si-Si^StSiGe) must be known. So far, b _Si-Si^StSi is commonly used to calculate strain in strained Si, which may result in inaccurate strain values. In this work, we report the first direct measurement of b_Si-Si^StSi by correlating high-resolution X-ray diffraction and Raman spectroscopy, which yields a measured value of -784 ± 4 cm^-1. We also show that the strain shift coefficient of SiGe, b_Si-Si^StSiGe, is a strong function of Ge concentration (x), and follows the empirical relation: b = -773.9 - 897.7x for x < 0.35.

Original language	English
Pages (from-to)	7922-7924
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Volume	44
Issue number	11
DOIs	https://doi.org/10.1143/JJAP.44.7922
Publication status	Published - Nov 9 2005
Externally published	Yes

ASJC Scopus Subject Areas

General Engineering
General Physics and Astronomy

Keywords

Measurement
Phonon strain shift coefficient
Raman
Strain
Strained Si
Strained SiGe

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10.1143/JJAP.44.7922

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title = "Determination of Raman phonon strain shift coefficient of strained silicon and strained SiGe",

abstract = "The use of Raman spectroscopy to characterize strain in strained Si and strained SiGe has been widely accepted. To use Raman spectroscopy for quantitative biaxial strain measurements, the strain shift coefficient for Si-Si vibration from strained Si (bSi-SiStSi) and strained SiGe (bSi-SiStSiGe) must be known. So far, b Si-SiStSi is commonly used to calculate strain in strained Si, which may result in inaccurate strain values. In this work, we report the first direct measurement of bSi-SiStSi by correlating high-resolution X-ray diffraction and Raman spectroscopy, which yields a measured value of -784 ± 4 cm-1. We also show that the strain shift coefficient of SiGe, bSi-SiStSiGe, is a strong function of Ge concentration (x), and follows the empirical relation: b = -773.9 - 897.7x for x < 0.35.",

keywords = "Measurement, Phonon strain shift coefficient, Raman, Strain, Strained Si, Strained SiGe",

author = "Wong, {L. H.} and Wong, {C. C.} and Liu, {J. P.} and Sohn, {D. K.} and L. Chan and Hsia, {L. C.} and H. Zang and Ni, {Z. H.} and Shen, {Z. X.}",

year = "2005",

month = nov,

day = "9",

doi = "10.1143/JJAP.44.7922",

language = "English",

volume = "44",

pages = "7922--7924",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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TY - JOUR

T1 - Determination of Raman phonon strain shift coefficient of strained silicon and strained SiGe

AU - Wong, L. H.

AU - Wong, C. C.

AU - Liu, J. P.

AU - Sohn, D. K.

AU - Chan, L.

AU - Hsia, L. C.

AU - Zang, H.

AU - Ni, Z. H.

AU - Shen, Z. X.

PY - 2005/11/9

Y1 - 2005/11/9

N2 - The use of Raman spectroscopy to characterize strain in strained Si and strained SiGe has been widely accepted. To use Raman spectroscopy for quantitative biaxial strain measurements, the strain shift coefficient for Si-Si vibration from strained Si (bSi-SiStSi) and strained SiGe (bSi-SiStSiGe) must be known. So far, b Si-SiStSi is commonly used to calculate strain in strained Si, which may result in inaccurate strain values. In this work, we report the first direct measurement of bSi-SiStSi by correlating high-resolution X-ray diffraction and Raman spectroscopy, which yields a measured value of -784 ± 4 cm-1. We also show that the strain shift coefficient of SiGe, bSi-SiStSiGe, is a strong function of Ge concentration (x), and follows the empirical relation: b = -773.9 - 897.7x for x < 0.35.

AB - The use of Raman spectroscopy to characterize strain in strained Si and strained SiGe has been widely accepted. To use Raman spectroscopy for quantitative biaxial strain measurements, the strain shift coefficient for Si-Si vibration from strained Si (bSi-SiStSi) and strained SiGe (bSi-SiStSiGe) must be known. So far, b Si-SiStSi is commonly used to calculate strain in strained Si, which may result in inaccurate strain values. In this work, we report the first direct measurement of bSi-SiStSi by correlating high-resolution X-ray diffraction and Raman spectroscopy, which yields a measured value of -784 ± 4 cm-1. We also show that the strain shift coefficient of SiGe, bSi-SiStSiGe, is a strong function of Ge concentration (x), and follows the empirical relation: b = -773.9 - 897.7x for x < 0.35.

KW - Measurement

KW - Phonon strain shift coefficient

KW - Raman

KW - Strain

KW - Strained Si

KW - Strained SiGe

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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ER -

Determination of Raman phonon strain shift coefficient of strained silicon and strained SiGe

Abstract

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Keywords

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