Dielectric degradation mechanism for copper interconnects capped with CoWP

T. L. Tan; C. L. Gan; A. Y. Du; C. K. Cheng; J. P. Gambino

doi:10.1063/1.2929388

Dielectric degradation mechanism for copper interconnects capped with CoWP

T. L. Tan, C. L. Gan, A. Y. Du, C. K. Cheng, J. P. Gambino

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Time-dependent dielectric breakdown (TDDB) reliability of CoWP-capped copper/ Si O2 interconnect structures are observed to be better than conventional SiN-capped structures. The activation energy for TDDB (Ea) is higher for CoWP-capped structures (0.66-0.84 eV) as compared to SiN-capped ones (0.47 eV), and is comparable to the Ea for intrinsic breakdown of Si O2. The TDDB degradation mechanism in CoWP-capped structures is postulated to be dominated by the properties of the intrametal dielectric, as opposed to being influenced by the properties of dielectric cap and associated interfaces. The presence of the dielectric cap lowers the Ea and increases leakage by Poole-Frenkel emission.

Original language	English
Article number	201916
Journal	Applied Physics Letters
Volume	92
Issue number	20
DOIs	https://doi.org/10.1063/1.2929388
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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title = "Dielectric degradation mechanism for copper interconnects capped with CoWP",

abstract = "Time-dependent dielectric breakdown (TDDB) reliability of CoWP-capped copper/ Si O2 interconnect structures are observed to be better than conventional SiN-capped structures. The activation energy for TDDB (Ea) is higher for CoWP-capped structures (0.66-0.84 eV) as compared to SiN-capped ones (0.47 eV), and is comparable to the Ea for intrinsic breakdown of Si O2. The TDDB degradation mechanism in CoWP-capped structures is postulated to be dominated by the properties of the intrametal dielectric, as opposed to being influenced by the properties of dielectric cap and associated interfaces. The presence of the dielectric cap lowers the Ea and increases leakage by Poole-Frenkel emission.",

author = "Tan, {T. L.} and Gan, {C. L.} and Du, {A. Y.} and Cheng, {C. K.} and Gambino, {J. P.}",

year = "2008",

doi = "10.1063/1.2929388",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

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T1 - Dielectric degradation mechanism for copper interconnects capped with CoWP

AU - Tan, T. L.

AU - Gan, C. L.

AU - Du, A. Y.

AU - Cheng, C. K.

AU - Gambino, J. P.

PY - 2008

Y1 - 2008

N2 - Time-dependent dielectric breakdown (TDDB) reliability of CoWP-capped copper/ Si O2 interconnect structures are observed to be better than conventional SiN-capped structures. The activation energy for TDDB (Ea) is higher for CoWP-capped structures (0.66-0.84 eV) as compared to SiN-capped ones (0.47 eV), and is comparable to the Ea for intrinsic breakdown of Si O2. The TDDB degradation mechanism in CoWP-capped structures is postulated to be dominated by the properties of the intrametal dielectric, as opposed to being influenced by the properties of dielectric cap and associated interfaces. The presence of the dielectric cap lowers the Ea and increases leakage by Poole-Frenkel emission.

AB - Time-dependent dielectric breakdown (TDDB) reliability of CoWP-capped copper/ Si O2 interconnect structures are observed to be better than conventional SiN-capped structures. The activation energy for TDDB (Ea) is higher for CoWP-capped structures (0.66-0.84 eV) as compared to SiN-capped ones (0.47 eV), and is comparable to the Ea for intrinsic breakdown of Si O2. The TDDB degradation mechanism in CoWP-capped structures is postulated to be dominated by the properties of the intrametal dielectric, as opposed to being influenced by the properties of dielectric cap and associated interfaces. The presence of the dielectric cap lowers the Ea and increases leakage by Poole-Frenkel emission.

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Dielectric degradation mechanism for copper interconnects capped with CoWP

Abstract

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