Abstract
To understand the microstructure control of BST thin film for hydrogen sensing application, the dielectric properties of the sol-gel derived Ba0.67Sr0.33Ti1.02O3 (BST) and La0.003Ba0.67 Sr0.33Ti1.02O3 (LBST) films annealed at different oxygen partial pressures at 475°C are studied in this paper. The thermal properties of the formulated solution of the BST gel were analysed. The dielectric properties were characterised with oxygen partial pressure in post-annealing atmosphere, frequency, and temperature. It is shown that the dielectric properties are closely correlated with the microstructure of the BST films. The low value of dielectric constant in all samples is attributed to the amorphous structure. The energy loss is mainly caused by the relaxation of the oxygen vacancies in the films. It is believed that controlling of oxygen vacancies is important for BST hydrogen gas sensor application. The gas sensitivity characterised by turn-on voltage shift of dc I-V curve was also carried out in this study.
| Original language | English |
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| Pages | 171-174 |
| Number of pages | 4 |
| Publication status | Published - 1999 |
| Externally published | Yes |
| Event | 8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99 - Singapore, Singapore Duration: Sept 8 1999 → Sept 10 1999 |
Conference
| Conference | 8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99 |
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| Country/Territory | Singapore |
| City | Singapore |
| Period | 9/8/99 → 9/10/99 |
ASJC Scopus Subject Areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering