Direct evidence of Cu/cap/liner edge being the dominant electromigration path in dual damascene Cu interconnects

W. Shao; S. G. Mhaisalkar; T. Sritharan; A. V. Vairagar; H. J. Engelmann; O. Aubel; E. Zschech; A. M. Gusak; K. N. Tu

doi:10.1063/1.2437689

Direct evidence of Cu/cap/liner edge being the dominant electromigration path in dual damascene Cu interconnects

W. Shao^*, S. G. Mhaisalkar, T. Sritharan, A. V. Vairagar, H. J. Engelmann, O. Aubel, E. Zschech, A. M. Gusak, K. N. Tu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

In this investigation, Cu/dielectric-cap interface and Cu/cap/liner edge were studied in detail to identify the dominant path in electromigration stressed via-fed test structures that represent the dual damascene architectures in Cu metallization. The impact of the electron wind force on void evolution, agglomeration at the Cu/cap/liner edges, and interface diffusion was investigated based on morphological examinations. The investigations presented here show direct evidence of preferential accumulation of voids at the Cu/cap/liner edges. This preferential void accumulation towards Cu/cap/liner edge is analyzed and explained by means of a simplified Monte Carlo simulation.

Original language	English
Article number	052106
Journal	Applied Physics Letters
Volume	90
Issue number	5
DOIs	https://doi.org/10.1063/1.2437689
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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abstract = "In this investigation, Cu/dielectric-cap interface and Cu/cap/liner edge were studied in detail to identify the dominant path in electromigration stressed via-fed test structures that represent the dual damascene architectures in Cu metallization. The impact of the electron wind force on void evolution, agglomeration at the Cu/cap/liner edges, and interface diffusion was investigated based on morphological examinations. The investigations presented here show direct evidence of preferential accumulation of voids at the Cu/cap/liner edges. This preferential void accumulation towards Cu/cap/liner edge is analyzed and explained by means of a simplified Monte Carlo simulation.",

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AU - Shao, W.

AU - Mhaisalkar, S. G.

AU - Sritharan, T.

AU - Vairagar, A. V.

AU - Engelmann, H. J.

AU - Aubel, O.

AU - Zschech, E.

AU - Gusak, A. M.

AU - Tu, K. N.

PY - 2007

Y1 - 2007

N2 - In this investigation, Cu/dielectric-cap interface and Cu/cap/liner edge were studied in detail to identify the dominant path in electromigration stressed via-fed test structures that represent the dual damascene architectures in Cu metallization. The impact of the electron wind force on void evolution, agglomeration at the Cu/cap/liner edges, and interface diffusion was investigated based on morphological examinations. The investigations presented here show direct evidence of preferential accumulation of voids at the Cu/cap/liner edges. This preferential void accumulation towards Cu/cap/liner edge is analyzed and explained by means of a simplified Monte Carlo simulation.

AB - In this investigation, Cu/dielectric-cap interface and Cu/cap/liner edge were studied in detail to identify the dominant path in electromigration stressed via-fed test structures that represent the dual damascene architectures in Cu metallization. The impact of the electron wind force on void evolution, agglomeration at the Cu/cap/liner edges, and interface diffusion was investigated based on morphological examinations. The investigations presented here show direct evidence of preferential accumulation of voids at the Cu/cap/liner edges. This preferential void accumulation towards Cu/cap/liner edge is analyzed and explained by means of a simplified Monte Carlo simulation.

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Direct evidence of Cu/cap/liner edge being the dominant electromigration path in dual damascene Cu interconnects

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