Direct Observation of Indium Conductive Filaments in Transparent, Flexible, and Transferable Resistive Switching Memory

Kai Qian; Roland Yingjie Tay; Meng Fang Lin; Jingwei Chen; Huakai Li; Jinjun Lin; Jiangxin Wang; Guofa Cai; Viet Cuong Nguyen; Edwin Hang Tong Teo; Tupei Chen; Pooi See Lee

doi:10.1021/acsnano.6b07577

Direct Observation of Indium Conductive Filaments in Transparent, Flexible, and Transferable Resistive Switching Memory

Kai Qian, Roland Yingjie Tay, Meng Fang Lin, Jingwei Chen, Huakai Li, Jinjun Lin, Jiangxin Wang, Guofa Cai, Viet Cuong Nguyen, Edwin Hang Tong Teo, Tupei Chen, Pooi See Lee^*

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

96 Citations (Scopus)

Abstract

Electronics with multifunctionalities such as transparency, portability, and flexibility are anticipated for future circuitry development. Flexible memory is one of the indispensable elements in a hybrid electronic integrated circuit as the information storage device. Herein, we demonstrate a transparent, flexible, and transferable hexagonal boron nitride (hBN)-based resistive switching memory with indium tin oxide (ITO) and graphene electrodes on soft polydimethylsiloxane (PDMS) substrate. The ITO/hBN/graphene/PDMS memory device not only exhibits excellent performance in terms of optical transmittance (∼85% in the visible wavelength), ON/OFF ratio (∼480), retention time (∼5 × 10⁴ s) but also shows robust flexibility under bending conditions and stable operation on arbitrary substrates. More importantly, direct observation of indium filaments in an ITO/hBN/graphene device is found via ex situ transmission electron microscopy, which provides critical insight on the complex resistive switching mechanisms.

Original language	English
Pages (from-to)	1712-1718
Number of pages	7
Journal	ACS Nano
Volume	11
Issue number	2
DOIs	https://doi.org/10.1021/acsnano.6b07577
Publication status	Published - Feb 28 2017
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2017 American Chemical Society.

ASJC Scopus Subject Areas

General Materials Science
General Engineering
General Physics and Astronomy

Keywords

ex situ TEM
graphene
hexagonal boron nitride
indium filament
transferable memory
transparent and flexible memory

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10.1021/acsnano.6b07577

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title = "Direct Observation of Indium Conductive Filaments in Transparent, Flexible, and Transferable Resistive Switching Memory",

abstract = "Electronics with multifunctionalities such as transparency, portability, and flexibility are anticipated for future circuitry development. Flexible memory is one of the indispensable elements in a hybrid electronic integrated circuit as the information storage device. Herein, we demonstrate a transparent, flexible, and transferable hexagonal boron nitride (hBN)-based resistive switching memory with indium tin oxide (ITO) and graphene electrodes on soft polydimethylsiloxane (PDMS) substrate. The ITO/hBN/graphene/PDMS memory device not only exhibits excellent performance in terms of optical transmittance (∼85\% in the visible wavelength), ON/OFF ratio (∼480), retention time (∼5 × 104 s) but also shows robust flexibility under bending conditions and stable operation on arbitrary substrates. More importantly, direct observation of indium filaments in an ITO/hBN/graphene device is found via ex situ transmission electron microscopy, which provides critical insight on the complex resistive switching mechanisms.",

keywords = "ex situ TEM, graphene, hexagonal boron nitride, indium filament, transferable memory, transparent and flexible memory",

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doi = "10.1021/acsnano.6b07577",

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T1 - Direct Observation of Indium Conductive Filaments in Transparent, Flexible, and Transferable Resistive Switching Memory

AU - Qian, Kai

AU - Tay, Roland Yingjie

AU - Lin, Meng Fang

AU - Chen, Jingwei

AU - Li, Huakai

AU - Lin, Jinjun

AU - Wang, Jiangxin

AU - Cai, Guofa

AU - Nguyen, Viet Cuong

AU - Teo, Edwin Hang Tong

AU - Chen, Tupei

AU - Lee, Pooi See

PY - 2017/2/28

Y1 - 2017/2/28

N2 - Electronics with multifunctionalities such as transparency, portability, and flexibility are anticipated for future circuitry development. Flexible memory is one of the indispensable elements in a hybrid electronic integrated circuit as the information storage device. Herein, we demonstrate a transparent, flexible, and transferable hexagonal boron nitride (hBN)-based resistive switching memory with indium tin oxide (ITO) and graphene electrodes on soft polydimethylsiloxane (PDMS) substrate. The ITO/hBN/graphene/PDMS memory device not only exhibits excellent performance in terms of optical transmittance (∼85% in the visible wavelength), ON/OFF ratio (∼480), retention time (∼5 × 104 s) but also shows robust flexibility under bending conditions and stable operation on arbitrary substrates. More importantly, direct observation of indium filaments in an ITO/hBN/graphene device is found via ex situ transmission electron microscopy, which provides critical insight on the complex resistive switching mechanisms.

AB - Electronics with multifunctionalities such as transparency, portability, and flexibility are anticipated for future circuitry development. Flexible memory is one of the indispensable elements in a hybrid electronic integrated circuit as the information storage device. Herein, we demonstrate a transparent, flexible, and transferable hexagonal boron nitride (hBN)-based resistive switching memory with indium tin oxide (ITO) and graphene electrodes on soft polydimethylsiloxane (PDMS) substrate. The ITO/hBN/graphene/PDMS memory device not only exhibits excellent performance in terms of optical transmittance (∼85% in the visible wavelength), ON/OFF ratio (∼480), retention time (∼5 × 104 s) but also shows robust flexibility under bending conditions and stable operation on arbitrary substrates. More importantly, direct observation of indium filaments in an ITO/hBN/graphene device is found via ex situ transmission electron microscopy, which provides critical insight on the complex resistive switching mechanisms.

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KW - indium filament

KW - transferable memory

KW - transparent and flexible memory

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Direct Observation of Indium Conductive Filaments in Transparent, Flexible, and Transferable Resistive Switching Memory

Abstract

Bibliographical note

ASJC Scopus Subject Areas

Keywords

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