Abstract
In this paper, we report a simple direct-write patterning process for the conjugated polymer polythiophene based on ultraviolet laser ablation. The polythiophene films were prepared by electrochemical polymerisation. A custom built dual function lithography system based on a 325nm CW He-Cd laser was used for patterning the films. Ablation was observed for an incident power density of 286kWcm-2. Grooves with widths in the range of 2-3μm have been fabricated. This process does not involve resist masks and any wet development step. The insolubility of polythiophene suggests that it can be used as a positive self-developing resist. Alternatively, the ablated patterns can be used directly as device structures. The present process may have applications in polymer electronic devices and micromachining .
| Original language | English |
|---|---|
| Pages (from-to) | 57-65 |
| Number of pages | 9 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3183 |
| DOIs | |
| Publication status | Published - 1997 |
| Externally published | Yes |
| Event | Microlithographic Techniques in IC Fabrication - Singapore, Singapore Duration: Jun 25 1997 → Jun 25 1997 |
ASJC Scopus Subject Areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
Keywords
- Conjugated polymers
- Laser ablation
- Microlithography
- Micromachining
- Polythiophene