Disc-like 7, 14-dicyano-ovalene-3,4:10,11-bis(dicarboximide) as a solution-processible n-type semiconductor for air stable field-effect transistors

Jinling Li; Jing Jing Chang; Huei Shuan Tan; Hui Jiang; Xiaodong Chen; Zhikuan Chen; Jie Zhang; Jishan Wu

doi:10.1039/c1sc00739d

Disc-like 7, 14-dicyano-ovalene-3,4:10,11-bis(dicarboximide) as a solution-processible n-type semiconductor for air stable field-effect transistors

Jinling Li, Jing Jing Chang, Huei Shuan Tan, Hui Jiang, Xiaodong Chen, Zhikuan Chen, Jie Zhang, Jishan Wu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

Large disc-like ovalene diimides (ODI and ODI-CN) were prepared for the first time mainly via Diels-Alder cycloaddition reactions at the bay regions of bisanthene. The CN-substituted ovalene diimide (ODI-CN) exhibited typical n-type semiconducting behaviour in solution processing OFET devices, showing high electron mobility up to 1.0 cm ² V ^-1 s ^-1 in nitrogen atmosphere and 0.51 cm ² V ^-1 s ^-1 in air together with good device stability.

Original language	English
Pages (from-to)	846-850
Number of pages	5
Journal	Chemical Science
Volume	3
Issue number	3
DOIs	https://doi.org/10.1039/c1sc00739d
Publication status	Published - Mar 2012
Externally published	Yes

ASJC Scopus Subject Areas

General Chemistry

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@article{a72b4cb09d39421dab024d1285c8b4c1,

title = "Disc-like 7, 14-dicyano-ovalene-3,4:10,11-bis(dicarboximide) as a solution-processible n-type semiconductor for air stable field-effect transistors",

abstract = "Large disc-like ovalene diimides (ODI and ODI-CN) were prepared for the first time mainly via Diels-Alder cycloaddition reactions at the bay regions of bisanthene. The CN-substituted ovalene diimide (ODI-CN) exhibited typical n-type semiconducting behaviour in solution processing OFET devices, showing high electron mobility up to 1.0 cm 2 V -1 s -1 in nitrogen atmosphere and 0.51 cm 2 V -1 s -1 in air together with good device stability.",

author = "Jinling Li and Chang, {Jing Jing} and Tan, {Huei Shuan} and Hui Jiang and Xiaodong Chen and Zhikuan Chen and Jie Zhang and Jishan Wu",

year = "2012",

month = mar,

doi = "10.1039/c1sc00739d",

language = "English",

volume = "3",

pages = "846--850",

journal = "Chemical Science",

issn = "2041-6520",

publisher = "Royal Society of Chemistry",

number = "3",

}

TY - JOUR

T1 - Disc-like 7, 14-dicyano-ovalene-3,4:10,11-bis(dicarboximide) as a solution-processible n-type semiconductor for air stable field-effect transistors

AU - Li, Jinling

AU - Chang, Jing Jing

AU - Tan, Huei Shuan

AU - Jiang, Hui

AU - Chen, Xiaodong

AU - Chen, Zhikuan

AU - Zhang, Jie

AU - Wu, Jishan

PY - 2012/3

Y1 - 2012/3

N2 - Large disc-like ovalene diimides (ODI and ODI-CN) were prepared for the first time mainly via Diels-Alder cycloaddition reactions at the bay regions of bisanthene. The CN-substituted ovalene diimide (ODI-CN) exhibited typical n-type semiconducting behaviour in solution processing OFET devices, showing high electron mobility up to 1.0 cm 2 V -1 s -1 in nitrogen atmosphere and 0.51 cm 2 V -1 s -1 in air together with good device stability.

AB - Large disc-like ovalene diimides (ODI and ODI-CN) were prepared for the first time mainly via Diels-Alder cycloaddition reactions at the bay regions of bisanthene. The CN-substituted ovalene diimide (ODI-CN) exhibited typical n-type semiconducting behaviour in solution processing OFET devices, showing high electron mobility up to 1.0 cm 2 V -1 s -1 in nitrogen atmosphere and 0.51 cm 2 V -1 s -1 in air together with good device stability.

UR - http://www.scopus.com/inward/record.url?scp=84863116514&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863116514&partnerID=8YFLogxK

U2 - 10.1039/c1sc00739d

DO - 10.1039/c1sc00739d

M3 - Article

AN - SCOPUS:84863116514

SN - 2041-6520

VL - 3

SP - 846

EP - 850

JO - Chemical Science

JF - Chemical Science

IS - 3

ER -

Disc-like 7, 14-dicyano-ovalene-3,4:10,11-bis(dicarboximide) as a solution-processible n-type semiconductor for air stable field-effect transistors

Abstract

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