Dopant activation in subamorphized silicon upon laser annealing

K. K. Ong; K. L. Pey; P. S. Lee; A. T.S. Wee; X. C. Wang; Y. F. Chong

doi:10.1063/1.2335950

Dopant activation in subamorphized silicon upon laser annealing

K. K. Ong^*, K. L. Pey, P. S. Lee, A. T.S. Wee, X. C. Wang, Y. F. Chong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

In this letter, the authors study the dopant activation and dopant distribution in a Si⁺ subamorphized Si (SAI-Si) when subjected to laser annealing (LA). The results show an enhanced boron activation in the SAI-Si in the nonmelt regime as compared to a crystalline Si (c-Si). The enhancement is caused by a vacancy-rich surface generated by the Si⁺ preimplantation that promotes the incorporation of boron atoms into the substitutional sites. On the other hand, shallow-melt LA produces a similar boron activation in both SAI-Si and c-Si samples due to a melting that consumes the entire as-implanted profile and the vacancy-rich region.

Original language	English
Article number	082101
Journal	Applied Physics Letters
Volume	89
Issue number	8
DOIs	https://doi.org/10.1063/1.2335950
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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title = "Dopant activation in subamorphized silicon upon laser annealing",

abstract = "In this letter, the authors study the dopant activation and dopant distribution in a Si+ subamorphized Si (SAI-Si) when subjected to laser annealing (LA). The results show an enhanced boron activation in the SAI-Si in the nonmelt regime as compared to a crystalline Si (c-Si). The enhancement is caused by a vacancy-rich surface generated by the Si+ preimplantation that promotes the incorporation of boron atoms into the substitutional sites. On the other hand, shallow-melt LA produces a similar boron activation in both SAI-Si and c-Si samples due to a melting that consumes the entire as-implanted profile and the vacancy-rich region.",

author = "Ong, {K. K.} and Pey, {K. L.} and Lee, {P. S.} and Wee, {A. T.S.} and Wang, {X. C.} and Chong, {Y. F.}",

year = "2006",

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T1 - Dopant activation in subamorphized silicon upon laser annealing

AU - Ong, K. K.

AU - Pey, K. L.

AU - Lee, P. S.

AU - Wee, A. T.S.

AU - Wang, X. C.

AU - Chong, Y. F.

PY - 2006

Y1 - 2006

N2 - In this letter, the authors study the dopant activation and dopant distribution in a Si+ subamorphized Si (SAI-Si) when subjected to laser annealing (LA). The results show an enhanced boron activation in the SAI-Si in the nonmelt regime as compared to a crystalline Si (c-Si). The enhancement is caused by a vacancy-rich surface generated by the Si+ preimplantation that promotes the incorporation of boron atoms into the substitutional sites. On the other hand, shallow-melt LA produces a similar boron activation in both SAI-Si and c-Si samples due to a melting that consumes the entire as-implanted profile and the vacancy-rich region.

AB - In this letter, the authors study the dopant activation and dopant distribution in a Si+ subamorphized Si (SAI-Si) when subjected to laser annealing (LA). The results show an enhanced boron activation in the SAI-Si in the nonmelt regime as compared to a crystalline Si (c-Si). The enhancement is caused by a vacancy-rich surface generated by the Si+ preimplantation that promotes the incorporation of boron atoms into the substitutional sites. On the other hand, shallow-melt LA produces a similar boron activation in both SAI-Si and c-Si samples due to a melting that consumes the entire as-implanted profile and the vacancy-rich region.

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Dopant activation in subamorphized silicon upon laser annealing

Abstract

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