TY - GEN
T1 - Effect of bonding and aging temperatures on bond strengths of Cu with 75Sn25In solders
AU - Sasangka, W. A.
AU - Gan, C. L.
AU - Thompson, C. V.
AU - Choi, W. K.
AU - Wei, J.
PY - 2009
Y1 - 2009
N2 - In the present study, the interaction between thin film Cu and non-eutectic Sn-In is studied. The effects of the bonding and aging temperature on microstructure, IMC formation and also shear strength are investigated by SEM/EDX, XRD and shear testing. The bonding mechanism is proposed based on the obtained results. The bonding mechanism is proposed to occur over 2 stages: • An increase in bonding temperatures leads to an increase in the true contact area, and • The aging temperature leads to interdiffusion and assists formation of the IMC. The type of IMC that forms is η phase (Cu 6(Sn,In)5) which is similar to the interaction between Cu and eutectic Sn-In. The shear strength increases with increasing the bonding temperature. On the other hand, the aging temperature does not have a significant impact on the shear strength. This indicates that the shear strength is mostly affected by the true contact area rather than the IMC formation.
AB - In the present study, the interaction between thin film Cu and non-eutectic Sn-In is studied. The effects of the bonding and aging temperature on microstructure, IMC formation and also shear strength are investigated by SEM/EDX, XRD and shear testing. The bonding mechanism is proposed based on the obtained results. The bonding mechanism is proposed to occur over 2 stages: • An increase in bonding temperatures leads to an increase in the true contact area, and • The aging temperature leads to interdiffusion and assists formation of the IMC. The type of IMC that forms is η phase (Cu 6(Sn,In)5) which is similar to the interaction between Cu and eutectic Sn-In. The shear strength increases with increasing the bonding temperature. On the other hand, the aging temperature does not have a significant impact on the shear strength. This indicates that the shear strength is mostly affected by the true contact area rather than the IMC formation.
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U2 - 10.1109/EPTC.2009.5416527
DO - 10.1109/EPTC.2009.5416527
M3 - Conference contribution
AN - SCOPUS:77950959099
SN - 9781424451005
T3 - Proceedings of the Electronic Packaging Technology Conference, EPTC
SP - 336
EP - 341
BT - EPTC 2009 - Proceedings of 2009 11th Electronic Packaging Technology Conference
T2 - 2009 11th Electronic Packaging Technology Conference, EPTC 2009
Y2 - 9 December 2009 through 11 December 2009
ER -