TY - GEN
T1 - Effect of bonding pressure on the bond strengths of low temperature Ag-In bonds
AU - Made, Riko I.
AU - Gan, Chee Lip
AU - Lee, Chengkuo
AU - Yan, Liling
AU - Yu, Aibin
AU - Yoon, Seung Wook
PY - 2008
Y1 - 2008
N2 - Bonding of multiple indium-silver intermediate layers facilitates precise control of the formed alloy composition and the joint thickness. The bonding temperature and post-bonding re-melting temperature can thus be easily designed by controlling the multilayer materials and structure thicknesses. However, joining different materials involves the formation of intermetallics, which is known to be brittle. In this paper, In-Ag intermetallic phase formation under different applied pressure is studied.
AB - Bonding of multiple indium-silver intermediate layers facilitates precise control of the formed alloy composition and the joint thickness. The bonding temperature and post-bonding re-melting temperature can thus be easily designed by controlling the multilayer materials and structure thicknesses. However, joining different materials involves the formation of intermetallics, which is known to be brittle. In this paper, In-Ag intermetallic phase formation under different applied pressure is studied.
UR - http://www.scopus.com/inward/record.url?scp=51949107300&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=51949107300&partnerID=8YFLogxK
U2 - 10.1109/IPFA.2008.4588168
DO - 10.1109/IPFA.2008.4588168
M3 - Conference contribution
AN - SCOPUS:51949107300
SN - 1424420393
SN - 9781424420391
T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
BT - 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
T2 - 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Y2 - 7 July 2008 through 11 July 2008
ER -