Effect of charge accumulation on the stability of PEDOT:PSS during device operation

Jefri S. Teguh; Tze Chien Sum; Edwin K.L. Yeow

doi:10.1016/j.cplett.2014.05.034

Effect of charge accumulation on the stability of PEDOT:PSS during device operation

Jefri S. Teguh, Tze Chien Sum, Edwin K.L. Yeow^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The effect of charge imbalance and accumulation on the stability of the hole transporting layer PEDOT:PSS in devices is studied during device operation. The principal Raman peak of PEDOT at around 1420-1430 cm^-1 is weakened and undergoes band broadening cum shift due to oxidation by holes injected from the ITO anode (doping). Upon suspending the applied potential, the oxidized PEDOT converts back to its as-prepared state. The oxidation of PEDOT is found to be reversible as long as the applied potential is kept relatively low as higher potential would induce PEDOT decomposition.

Original language	English
Pages (from-to)	52-56
Number of pages	5
Journal	Chemical Physics Letters
Volume	607
DOIs	https://doi.org/10.1016/j.cplett.2014.05.034
Publication status	Published - Jun 27 2014
Externally published	Yes

ASJC Scopus Subject Areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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title = "Effect of charge accumulation on the stability of PEDOT:PSS during device operation",

abstract = "The effect of charge imbalance and accumulation on the stability of the hole transporting layer PEDOT:PSS in devices is studied during device operation. The principal Raman peak of PEDOT at around 1420-1430 cm-1 is weakened and undergoes band broadening cum shift due to oxidation by holes injected from the ITO anode (doping). Upon suspending the applied potential, the oxidized PEDOT converts back to its as-prepared state. The oxidation of PEDOT is found to be reversible as long as the applied potential is kept relatively low as higher potential would induce PEDOT decomposition.",

author = "Teguh, {Jefri S.} and Sum, {Tze Chien} and Yeow, {Edwin K.L.}",

year = "2014",

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doi = "10.1016/j.cplett.2014.05.034",

language = "English",

volume = "607",

pages = "52--56",

journal = "Chemical Physics Letters",

issn = "0009-2614",

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T1 - Effect of charge accumulation on the stability of PEDOT:PSS during device operation

AU - Teguh, Jefri S.

AU - Sum, Tze Chien

AU - Yeow, Edwin K.L.

PY - 2014/6/27

Y1 - 2014/6/27

N2 - The effect of charge imbalance and accumulation on the stability of the hole transporting layer PEDOT:PSS in devices is studied during device operation. The principal Raman peak of PEDOT at around 1420-1430 cm-1 is weakened and undergoes band broadening cum shift due to oxidation by holes injected from the ITO anode (doping). Upon suspending the applied potential, the oxidized PEDOT converts back to its as-prepared state. The oxidation of PEDOT is found to be reversible as long as the applied potential is kept relatively low as higher potential would induce PEDOT decomposition.

AB - The effect of charge imbalance and accumulation on the stability of the hole transporting layer PEDOT:PSS in devices is studied during device operation. The principal Raman peak of PEDOT at around 1420-1430 cm-1 is weakened and undergoes band broadening cum shift due to oxidation by holes injected from the ITO anode (doping). Upon suspending the applied potential, the oxidized PEDOT converts back to its as-prepared state. The oxidation of PEDOT is found to be reversible as long as the applied potential is kept relatively low as higher potential would induce PEDOT decomposition.

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UR - http://www.scopus.com/inward/citedby.url?scp=84902324456&partnerID=8YFLogxK

U2 - 10.1016/j.cplett.2014.05.034

DO - 10.1016/j.cplett.2014.05.034

M3 - Article

AN - SCOPUS:84902324456

SN - 0009-2614

VL - 607

SP - 52

EP - 56

JO - Chemical Physics Letters

JF - Chemical Physics Letters

ER -

Effect of charge accumulation on the stability of PEDOT:PSS during device operation

Abstract

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