Effect of current crowding on copper dual damascene via bottom failure for ULSI applications

R. Arijit; C. M. Tan; V. V. Anand; K. Ahila; G. Zhang; M. G. Subodh

Effect of current crowding on copper dual damascene via bottom failure for ULSI applications

R. Arijit^*, C. M. Tan, V. V. Anand, K. Ahila, G. Zhang, M. G. Subodh

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

Reliability issues is becoming more important in interconnect via. Electromigration experiments are performed on line/via structures in two level Cu dual damascene interconnection system and it is found that wide line/via fails earlier than the narrow line/via. Semi-classical width dependence Black's equation together with finite element analysis revealed that the difference in the time to failure is due to the much larger average current density along the heterogeneous interface for the wide line/via structure, and good agreement is obtained between the simulation and experimental results.

Original language	English
Pages	173-176
Number of pages	4
Publication status	Published - 2004
Externally published	Yes
Event	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan, Province of China Duration: Jul 5 2004 → Jul 8 2004

Conference

Conference	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
Country/Territory	Taiwan, Province of China
Period	7/5/04 → 7/8/04

ASJC Scopus Subject Areas

General Engineering

Cite this

@conference{b1af4c97a30e4198a70ea12a331f845b,

title = "Effect of current crowding on copper dual damascene via bottom failure for ULSI applications",

abstract = "Reliability issues is becoming more important in interconnect via. Electromigration experiments are performed on line/via structures in two level Cu dual damascene interconnection system and it is found that wide line/via fails earlier than the narrow line/via. Semi-classical width dependence Black's equation together with finite element analysis revealed that the difference in the time to failure is due to the much larger average current density along the heterogeneous interface for the wide line/via structure, and good agreement is obtained between the simulation and experimental results.",

author = "R. Arijit and Tan, {C. M.} and Anand, {V. V.} and K. Ahila and G. Zhang and Subodh, {M. G.}",

year = "2004",

language = "English",

pages = "173--176",

note = "Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 ; Conference date: 05-07-2004 Through 08-07-2004",

}

Effect of current crowding on copper dual damascene via bottom failure for ULSI applications. / Arijit, R.; Tan, C. M.; Anand, V. V. et al.
2004. 173-176 Paper presented at Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, Taiwan, Province of China.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Effect of current crowding on copper dual damascene via bottom failure for ULSI applications

AU - Arijit, R.

AU - Tan, C. M.

AU - Anand, V. V.

AU - Ahila, K.

AU - Zhang, G.

AU - Subodh, M. G.

PY - 2004

Y1 - 2004

N2 - Reliability issues is becoming more important in interconnect via. Electromigration experiments are performed on line/via structures in two level Cu dual damascene interconnection system and it is found that wide line/via fails earlier than the narrow line/via. Semi-classical width dependence Black's equation together with finite element analysis revealed that the difference in the time to failure is due to the much larger average current density along the heterogeneous interface for the wide line/via structure, and good agreement is obtained between the simulation and experimental results.

AB - Reliability issues is becoming more important in interconnect via. Electromigration experiments are performed on line/via structures in two level Cu dual damascene interconnection system and it is found that wide line/via fails earlier than the narrow line/via. Semi-classical width dependence Black's equation together with finite element analysis revealed that the difference in the time to failure is due to the much larger average current density along the heterogeneous interface for the wide line/via structure, and good agreement is obtained between the simulation and experimental results.

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UR - http://www.scopus.com/inward/citedby.url?scp=14844334589&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:14844334589

SP - 173

EP - 176

T2 - Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004

Y2 - 5 July 2004 through 8 July 2004

ER -

Effect of current crowding on copper dual damascene via bottom failure for ULSI applications

Abstract

Conference

ASJC Scopus Subject Areas

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