Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization

C. L. Gan; C. V. Thompson; K. L. Pey; W. K. Choi; H. L. Tay; B. Yu; M. K. Radhakrishnan

doi:10.1063/1.1428410

Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization

C. L. Gan^*, C. V. Thompson, K. L. Pey, W. K. Choi, H. L. Tay, B. Yu, M. K. Radhakrishnan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

70 Citations (Scopus)

Abstract

Electromigration in the lower metal (M1) and the upper metal (M2) of Cu dual-damascene interconnections has been studied. The failure times of M2 test structures are significantly longer than those of identical M1 structures. It is proposed that this asymmetry is the result of a difference in the location of void formation and growth, which is believed to be related to the ease of electromigration-induced void nucleation and growth at the Cu/Si₃N₄ interface. Asymmetric via reliability is therefore an intrinsic characteristic of current Cu interconnect technology.

Original language	English
Pages (from-to)	4592-4594
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	27
DOIs	https://doi.org/10.1063/1.1428410
Publication status	Published - Dec 31 2001
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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title = "Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization",

abstract = "Electromigration in the lower metal (M1) and the upper metal (M2) of Cu dual-damascene interconnections has been studied. The failure times of M2 test structures are significantly longer than those of identical M1 structures. It is proposed that this asymmetry is the result of a difference in the location of void formation and growth, which is believed to be related to the ease of electromigration-induced void nucleation and growth at the Cu/Si3N4 interface. Asymmetric via reliability is therefore an intrinsic characteristic of current Cu interconnect technology.",

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T1 - Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization

AU - Gan, C. L.

AU - Thompson, C. V.

AU - Pey, K. L.

AU - Choi, W. K.

AU - Tay, H. L.

AU - Yu, B.

AU - Radhakrishnan, M. K.

PY - 2001/12/31

Y1 - 2001/12/31

N2 - Electromigration in the lower metal (M1) and the upper metal (M2) of Cu dual-damascene interconnections has been studied. The failure times of M2 test structures are significantly longer than those of identical M1 structures. It is proposed that this asymmetry is the result of a difference in the location of void formation and growth, which is believed to be related to the ease of electromigration-induced void nucleation and growth at the Cu/Si3N4 interface. Asymmetric via reliability is therefore an intrinsic characteristic of current Cu interconnect technology.

AB - Electromigration in the lower metal (M1) and the upper metal (M2) of Cu dual-damascene interconnections has been studied. The failure times of M2 test structures are significantly longer than those of identical M1 structures. It is proposed that this asymmetry is the result of a difference in the location of void formation and growth, which is believed to be related to the ease of electromigration-induced void nucleation and growth at the Cu/Si3N4 interface. Asymmetric via reliability is therefore an intrinsic characteristic of current Cu interconnect technology.

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Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization

Abstract

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