Abstract
While the reliability of a dual-damascene via is independent of the number of segments connected to it, it is strongly dependent on the distribution of current among the segments. The most highly stressed segments are not always the least reliable. This behavior for Cu is different than for A1.
Original language | English |
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Pages (from-to) | 594-595 |
Number of pages | 2 |
Journal | Annual Proceedings - Reliability Physics (Symposium) |
Publication status | Published - 2003 |
Externally published | Yes |
Event | 2003 IEEE International Reliability Physics Symposium Proceedings - Dallas, TX, United States Duration: Mar 30 2003 → Apr 4 2003 |
ASJC Scopus Subject Areas
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality
Keywords
- Copper metallization
- Electromigration
- Interconnect tree
- Reliability