Effect of deposition temperature on the microstructure and dielectric properties of Ba 0.6Sr 0.4TiO 3 thin film deposited by radio-frequency magnetron sputtering

Zuyong Feng; Wei Chenooi; Kiang Tan

doi:10.1002/pssa.200925045

Effect of deposition temperature on the microstructure and dielectric properties of Ba _0.6Sr _0.4TiO ₃ thin film deposited by radio-frequency magnetron sputtering

Zuyong Feng^*, Wei Chenooi, Kiang Tan

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

Abstract

Ba06Sr04TiO3 (BST) thin films with the thickness of 300 nm were deposited on Pt/SiO2/Si substrates at various deposition temperatures by RF magnetron sputtering technique, and their electric properties were investigated. Due to the high tem-perature annealing process at substrate temperature of 600 °C, well-crystallized BST film was deposited. The dielectric con-stant and dielectric loss of the film deposited at 600 °C are 300 and 0.033 at 100 kHz, respectively. Due to the good crys- tallinity of the BST films deposited by RF magnetron sputter-ing, high dielectric tunability up to 39.2% is achieved at a low applied voltage of 5 V.

Original language	English
Pages (from-to)	1510-1514
Number of pages	5
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	206
Issue number	7
DOIs	https://doi.org/10.1002/pssa.200925045
Publication status	Published - Jul 2009
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1002/pssa.200925045

Cite this

@article{29744103d6c14e36b860ec51a61d85a7,

title = "Effect of deposition temperature on the microstructure and dielectric properties of Ba 0.6Sr 0.4TiO 3 thin film deposited by radio-frequency magnetron sputtering",

abstract = "Ba06Sr04TiO3 (BST) thin films with the thickness of 300 nm were deposited on Pt/SiO2/Si substrates at various deposition temperatures by RF magnetron sputtering technique, and their electric properties were investigated. Due to the high tem-perature annealing process at substrate temperature of 600 °C, well-crystallized BST film was deposited. The dielectric con-stant and dielectric loss of the film deposited at 600 °C are 300 and 0.033 at 100 kHz, respectively. Due to the good crys- tallinity of the BST films deposited by RF magnetron sputter-ing, high dielectric tunability up to 39.2% is achieved at a low applied voltage of 5 V.",

author = "Zuyong Feng and Wei Chenooi and Kiang Tan",

year = "2009",

month = jul,

doi = "10.1002/pssa.200925045",

language = "English",

volume = "206",

pages = "1510--1514",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

number = "7",

}

Effect of deposition temperature on the microstructure and dielectric properties of Ba _0.6Sr _0.4TiO ₃ thin film deposited by radio-frequency magnetron sputtering. / Feng, Zuyong; Chenooi, Wei; Tan, Kiang.
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 206, No. 7, 07.2009, p. 1510-1514.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effect of deposition temperature on the microstructure and dielectric properties of Ba 0.6Sr 0.4TiO 3 thin film deposited by radio-frequency magnetron sputtering

AU - Feng, Zuyong

AU - Chenooi, Wei

AU - Tan, Kiang

PY - 2009/7

Y1 - 2009/7

N2 - Ba06Sr04TiO3 (BST) thin films with the thickness of 300 nm were deposited on Pt/SiO2/Si substrates at various deposition temperatures by RF magnetron sputtering technique, and their electric properties were investigated. Due to the high tem-perature annealing process at substrate temperature of 600 °C, well-crystallized BST film was deposited. The dielectric con-stant and dielectric loss of the film deposited at 600 °C are 300 and 0.033 at 100 kHz, respectively. Due to the good crys- tallinity of the BST films deposited by RF magnetron sputter-ing, high dielectric tunability up to 39.2% is achieved at a low applied voltage of 5 V.

AB - Ba06Sr04TiO3 (BST) thin films with the thickness of 300 nm were deposited on Pt/SiO2/Si substrates at various deposition temperatures by RF magnetron sputtering technique, and their electric properties were investigated. Due to the high tem-perature annealing process at substrate temperature of 600 °C, well-crystallized BST film was deposited. The dielectric con-stant and dielectric loss of the film deposited at 600 °C are 300 and 0.033 at 100 kHz, respectively. Due to the good crys- tallinity of the BST films deposited by RF magnetron sputter-ing, high dielectric tunability up to 39.2% is achieved at a low applied voltage of 5 V.

UR - http://www.scopus.com/inward/record.url?scp=67650458481&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67650458481&partnerID=8YFLogxK

U2 - 10.1002/pssa.200925045

DO - 10.1002/pssa.200925045

M3 - Article

AN - SCOPUS:67650458481

SN - 1862-6300

VL - 206

SP - 1510

EP - 1514

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 7

ER -

Effect of deposition temperature on the microstructure and dielectric properties of Ba _0.6Sr _0.4TiO ₃ thin film deposited by radio-frequency magnetron sputtering

Abstract

ASJC Scopus Subject Areas

Access to Document

Other files and links

Fingerprint

Cite this