Effect of doping on optical and transport properties of charge carriers in Alq3

A. Uddin*, C. B. Lee, X. Hu, T. K.S. Wong, X. W. Sun

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

19 Citations (Scopus)

Abstract

We investigated the optical and transport properties of charge carriers in doped amorphous Tris (8-hydroxyquinolinato) aluminum (Alq3) films from room temperature to 130 °C. The doping concentration of dopant DCM was up to 24 wt% in Alq3 films. The current-voltage, electroluminescence (EL) and light-current characteristics were measured. The current density was sharply increased up to a DCM concentration of 1.5 wt% in Alq3 films for the same bias voltage. The EL peak position shifted from green to red color with DCM doping concentration in Alq3. The highest EL efficiency was found for a DCM doping concentration of 0.5 wt%. The EL intensity was increased by about 2.5 times than that of the pure Alq3. The EL intensity was reduced with temperature.

Original languageEnglish
Pages (from-to)115-118
Number of pages4
JournalJournal of Crystal Growth
Volume288
Issue number1
DOIs
Publication statusPublished - Feb 2 2006
Externally publishedYes
EventInternational Conference on Materials for Advanced Technologies -
Duration: Jul 4 2005Jul 8 2005

ASJC Scopus Subject Areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Keywords

  • A1. Doping
  • B2. Organic semiconductor
  • B3. Alq
  • B3. OLED

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