Effect of ion implantation on layer inversion of Ni silicided poly-Si

P. S. Lee; K. L. Pey; D. Mangelinck; J. Ding; D. Z. Chi; T. Osipowicz; J. Y. Dai; L. Chan

doi:10.1149/1.1494828

Effect of ion implantation on layer inversion of Ni silicided poly-Si

P. S. Lee, K. L. Pey^*, D. Mangelinck, J. Ding, D. Z. Chi, T. Osipowicz, J. Y. Dai, L. Chan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The effect of ion implantation on the behavior and extent of layer inversion in Ni-silicided poly-Si was investigated. Two different implantation species, namely, BF₂⁺ and N₂⁺, which affect the poly-Si grain growth were used. Retarded layer inversion was found with the ion-implanted poly-Si substrates. However, the formation of NiSi₂ takes place at 700°C, which is slightly lower than that on Si(100). The easy nucleation of NiSi₂ on poly-Si is implicitly related to the morphology perturbation.

Original language	English
Pages (from-to)	G505-G509
Journal	Journal of the Electrochemical Society
Volume	149
Issue number	9
DOIs	https://doi.org/10.1149/1.1494828
Publication status	Published - Sept 2002
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.1494828

Cite this

@article{58e3ae46822e422681c2f34dbd9f086c,

title = "Effect of ion implantation on layer inversion of Ni silicided poly-Si",

abstract = "The effect of ion implantation on the behavior and extent of layer inversion in Ni-silicided poly-Si was investigated. Two different implantation species, namely, BF2+ and N2+, which affect the poly-Si grain growth were used. Retarded layer inversion was found with the ion-implanted poly-Si substrates. However, the formation of NiSi2 takes place at 700°C, which is slightly lower than that on Si(100). The easy nucleation of NiSi2 on poly-Si is implicitly related to the morphology perturbation.",

author = "Lee, {P. S.} and Pey, {K. L.} and D. Mangelinck and J. Ding and Chi, {D. Z.} and T. Osipowicz and Dai, {J. Y.} and L. Chan",

year = "2002",

month = sep,

doi = "10.1149/1.1494828",

language = "English",

volume = "149",

pages = "G505--G509",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "9",

}

TY - JOUR

T1 - Effect of ion implantation on layer inversion of Ni silicided poly-Si

AU - Lee, P. S.

AU - Pey, K. L.

AU - Mangelinck, D.

AU - Ding, J.

AU - Chi, D. Z.

AU - Osipowicz, T.

AU - Dai, J. Y.

AU - Chan, L.

PY - 2002/9

Y1 - 2002/9

N2 - The effect of ion implantation on the behavior and extent of layer inversion in Ni-silicided poly-Si was investigated. Two different implantation species, namely, BF2+ and N2+, which affect the poly-Si grain growth were used. Retarded layer inversion was found with the ion-implanted poly-Si substrates. However, the formation of NiSi2 takes place at 700°C, which is slightly lower than that on Si(100). The easy nucleation of NiSi2 on poly-Si is implicitly related to the morphology perturbation.

AB - The effect of ion implantation on the behavior and extent of layer inversion in Ni-silicided poly-Si was investigated. Two different implantation species, namely, BF2+ and N2+, which affect the poly-Si grain growth were used. Retarded layer inversion was found with the ion-implanted poly-Si substrates. However, the formation of NiSi2 takes place at 700°C, which is slightly lower than that on Si(100). The easy nucleation of NiSi2 on poly-Si is implicitly related to the morphology perturbation.

UR - http://www.scopus.com/inward/record.url?scp=0036747388&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036747388&partnerID=8YFLogxK

U2 - 10.1149/1.1494828

DO - 10.1149/1.1494828

M3 - Article

AN - SCOPUS:0036747388

SN - 0013-4651

VL - 149

SP - G505-G509

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 9

ER -

Effect of ion implantation on layer inversion of Ni silicided poly-Si

Abstract

ASJC Scopus Subject Areas

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this