Effect of Ti alloying in nickel silicide formation

Y. Setiawan; P. S. Lee; C. W. Tan; K. L. Pey

doi:10.1016/j.tsf.2005.09.066

Effect of Ti alloying in nickel silicide formation

Y. Setiawan^*, P. S. Lee, C. W. Tan, K. L. Pey

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

In the presence of interfacial oxide, an addition of 20 at.% Ti to Ni film leads to the formation of a thick TiO_x layer at the Ni(Ti)/Si interface upon annealing, preventing the inter-diffusion of Ni and Si hence hindering the Ni silicide formation up to 700 °C. At 800 °C, a mixture of predominant NiSi phase with some NiSi₂ grains facetted in (111) plane was observed. A different mechanism occurred for the sample with minimal oxygen contamination where Ni₃Si₂ was found to be stable up to 900 °C. Nevertheless, Ti addition has delayed the silicidation reaction to 600 °C.

Original language	English
Pages (from-to)	153-156
Number of pages	4
Journal	Thin Solid Films
Volume	504
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.09.066
Publication status	Published - May 10 2006
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Keywords

Alloys
NiSi
Nickel Titanium
Silicide

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10.1016/j.tsf.2005.09.066

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title = "Effect of Ti alloying in nickel silicide formation",

abstract = "In the presence of interfacial oxide, an addition of 20 at.% Ti to Ni film leads to the formation of a thick TiOx layer at the Ni(Ti)/Si interface upon annealing, preventing the inter-diffusion of Ni and Si hence hindering the Ni silicide formation up to 700 °C. At 800 °C, a mixture of predominant NiSi phase with some NiSi2 grains facetted in (111) plane was observed. A different mechanism occurred for the sample with minimal oxygen contamination where Ni3Si2 was found to be stable up to 900 °C. Nevertheless, Ti addition has delayed the silicidation reaction to 600 °C.",

keywords = "Alloys, NiSi, Nickel Titanium, Silicide",

author = "Y. Setiawan and Lee, {P. S.} and Tan, {C. W.} and Pey, {K. L.}",

year = "2006",

month = may,

day = "10",

doi = "10.1016/j.tsf.2005.09.066",

language = "English",

volume = "504",

pages = "153--156",

journal = "Thin Solid Films",

issn = "0040-6090",

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TY - JOUR

T1 - Effect of Ti alloying in nickel silicide formation

AU - Setiawan, Y.

AU - Lee, P. S.

AU - Tan, C. W.

AU - Pey, K. L.

PY - 2006/5/10

Y1 - 2006/5/10

N2 - In the presence of interfacial oxide, an addition of 20 at.% Ti to Ni film leads to the formation of a thick TiOx layer at the Ni(Ti)/Si interface upon annealing, preventing the inter-diffusion of Ni and Si hence hindering the Ni silicide formation up to 700 °C. At 800 °C, a mixture of predominant NiSi phase with some NiSi2 grains facetted in (111) plane was observed. A different mechanism occurred for the sample with minimal oxygen contamination where Ni3Si2 was found to be stable up to 900 °C. Nevertheless, Ti addition has delayed the silicidation reaction to 600 °C.

AB - In the presence of interfacial oxide, an addition of 20 at.% Ti to Ni film leads to the formation of a thick TiOx layer at the Ni(Ti)/Si interface upon annealing, preventing the inter-diffusion of Ni and Si hence hindering the Ni silicide formation up to 700 °C. At 800 °C, a mixture of predominant NiSi phase with some NiSi2 grains facetted in (111) plane was observed. A different mechanism occurred for the sample with minimal oxygen contamination where Ni3Si2 was found to be stable up to 900 °C. Nevertheless, Ti addition has delayed the silicidation reaction to 600 °C.

KW - Alloys

KW - NiSi

KW - Nickel Titanium

KW - Silicide

UR - http://www.scopus.com/inward/record.url?scp=33644929971&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33644929971&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2005.09.066

DO - 10.1016/j.tsf.2005.09.066

M3 - Article

AN - SCOPUS:33644929971

SN - 0040-6090

VL - 504

SP - 153

EP - 156

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Effect of Ti alloying in nickel silicide formation

Abstract

ASJC Scopus Subject Areas

Keywords

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