Effect of using chemical vapor deposition WSi2 and postmetallization annealing on gaAs metal-oxide-semiconductor capacitors

B. S. Ong; K. L. Pey; C. Y. Ong; C. S. Tan; C. L. Gan; H. Cai; D. A. Antoniadis; E. A. Fitzgerald

doi:10.1149/1.3460300

Effect of using chemical vapor deposition WSi₂ and postmetallization annealing on gaAs metal-oxide-semiconductor capacitors

B. S. Ong, K. L. Pey, C. Y. Ong, C. S. Tan, C. L. Gan, H. Cai, D. A. Antoniadis, E. A. Fitzgerald

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report the use of chemical vapor deposition (CVD) for tungsten silicide (WSi₂) gate deposition on an Al₂ O₃ /GaAs substrate for the realization of III-V metal-oxide-semiconductor capacitor stacks. The as-deposited capacitor shows smooth and abrupt interfaces and exhibits good capacitance-voltage (C-V) characteristics with low frequency dispersion at flatband voltage and accumulation. A lower dielectric constant for Al₂ O₃ (Keff ∼6.4) is reported due to fluorine incorporation from the precursor during the CVD process. The work function of the as-deposited WSi₂ metal gate is determined to be ∼4.2 eV and increases to ∼4.4 eV after thermal annealing at 600°C as observed from the C-V measurement due to hexagonal-tetragonal WSi₂ phase transformation.

Original language	English
Pages (from-to)	H328-H331
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	9
DOIs	https://doi.org/10.1149/1.3460300
Publication status	Published - 2010
Externally published	Yes

ASJC Scopus Subject Areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.3460300

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title = "Effect of using chemical vapor deposition WSi2 and postmetallization annealing on gaAs metal-oxide-semiconductor capacitors",

abstract = "We report the use of chemical vapor deposition (CVD) for tungsten silicide (WSi2) gate deposition on an Al2 O3 /GaAs substrate for the realization of III-V metal-oxide-semiconductor capacitor stacks. The as-deposited capacitor shows smooth and abrupt interfaces and exhibits good capacitance-voltage (C-V) characteristics with low frequency dispersion at flatband voltage and accumulation. A lower dielectric constant for Al2 O3 (Keff ∼6.4) is reported due to fluorine incorporation from the precursor during the CVD process. The work function of the as-deposited WSi2 metal gate is determined to be ∼4.2 eV and increases to ∼4.4 eV after thermal annealing at 600°C as observed from the C-V measurement due to hexagonal-tetragonal WSi2 phase transformation.",

author = "Ong, \{B. S.\} and Pey, \{K. L.\} and Ong, \{C. Y.\} and Tan, \{C. S.\} and Gan, \{C. L.\} and H. Cai and Antoniadis, \{D. A.\} and Fitzgerald, \{E. A.\}",

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volume = "13",

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journal = "Electrochemical and Solid-State Letters",

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T1 - Effect of using chemical vapor deposition WSi2 and postmetallization annealing on gaAs metal-oxide-semiconductor capacitors

AU - Ong, B. S.

AU - Pey, K. L.

AU - Ong, C. Y.

AU - Tan, C. S.

AU - Gan, C. L.

AU - Cai, H.

AU - Antoniadis, D. A.

AU - Fitzgerald, E. A.

PY - 2010

Y1 - 2010

N2 - We report the use of chemical vapor deposition (CVD) for tungsten silicide (WSi2) gate deposition on an Al2 O3 /GaAs substrate for the realization of III-V metal-oxide-semiconductor capacitor stacks. The as-deposited capacitor shows smooth and abrupt interfaces and exhibits good capacitance-voltage (C-V) characteristics with low frequency dispersion at flatband voltage and accumulation. A lower dielectric constant for Al2 O3 (Keff ∼6.4) is reported due to fluorine incorporation from the precursor during the CVD process. The work function of the as-deposited WSi2 metal gate is determined to be ∼4.2 eV and increases to ∼4.4 eV after thermal annealing at 600°C as observed from the C-V measurement due to hexagonal-tetragonal WSi2 phase transformation.

AB - We report the use of chemical vapor deposition (CVD) for tungsten silicide (WSi2) gate deposition on an Al2 O3 /GaAs substrate for the realization of III-V metal-oxide-semiconductor capacitor stacks. The as-deposited capacitor shows smooth and abrupt interfaces and exhibits good capacitance-voltage (C-V) characteristics with low frequency dispersion at flatband voltage and accumulation. A lower dielectric constant for Al2 O3 (Keff ∼6.4) is reported due to fluorine incorporation from the precursor during the CVD process. The work function of the as-deposited WSi2 metal gate is determined to be ∼4.2 eV and increases to ∼4.4 eV after thermal annealing at 600°C as observed from the C-V measurement due to hexagonal-tetragonal WSi2 phase transformation.

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JF - Electrochemical and Solid-State Letters

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Effect of using chemical vapor deposition WSi₂ and postmetallization annealing on gaAs metal-oxide-semiconductor capacitors

Abstract

ASJC Scopus Subject Areas

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