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Effect of using chemical vapor deposition WSi2 and postmetallization annealing on gaAs metal-oxide-semiconductor capacitors
B. S. Ong, K. L. Pey, C. Y. Ong, C. S. Tan, C. L. Gan, H. Cai, D. A. Antoniadis, E. A. Fitzgerald
Research output: Contribution to journal › Article › peer-review
2
Citations
(Scopus)