Effect of Zn(O,S) buffer layer thickness on charge carrier relaxation dynamics of CuInSe2 solar cell

Juan Sun; Venkatram Nalla; Mai Nguyen; Yi Ren; Sing Yang Chiam; Yue Wang; Kong Fai Tai; Handong Sun; Nikolay Zheludev; Sudip K. Batabyal; Lydia H. Wong

doi:10.1016/j.solener.2015.03.008

Effect of Zn(O,S) buffer layer thickness on charge carrier relaxation dynamics of CuInSe₂ solar cell

Juan Sun, Venkatram Nalla, Mai Nguyen, Yi Ren, Sing Yang Chiam, Yue Wang, Kong Fai Tai, Handong Sun, Nikolay Zheludev, Sudip K. Batabyal^*, Lydia H. Wong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

A pinhole free Zn(O,S) buffer layer was deposited on CuInSe₂ (CIS) absorber by chemical bath deposition (CBD) method. Thin Zn(O,S) exhibits better power conversion efficiency (PCE) at lower thickness. Enhancement of PCE from 1.5% to 3.9% was observed for electrodeposited CIS photovoltaic device when the buffer layer thickness reduces from 50nm to 20nm. Although the conduction band offset (CBO) at Zn(O,S)/CIS interface are almost identical for both the 20nm and 50nm thick buffer layers, investigation on charge carrier dynamics reveals that the carrier lifetime for the 20nm buffer is much longer than the 50nm buffer. This offers a plausible explanation for the higher Jsc of the device with 20nm buffer layer compared to the device with 50nm buffer layer.

Original language	English
Pages (from-to)	396-404
Number of pages	9
Journal	Solar Energy
Volume	115
DOIs	https://doi.org/10.1016/j.solener.2015.03.008
Publication status	Published - May 1 2015
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2015 Elsevier Ltd.

ASJC Scopus Subject Areas

Renewable Energy, Sustainability and the Environment
General Materials Science

Keywords

Buffer layer
Charge carrier dynamics
CuInSe
Pump-probe
Solar cell
Zn(O,S)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.solener.2015.03.008

Cite this

@article{2163b187ad914248ae520cb3051e3fea,

title = "Effect of Zn(O,S) buffer layer thickness on charge carrier relaxation dynamics of CuInSe2 solar cell",

abstract = "A pinhole free Zn(O,S) buffer layer was deposited on CuInSe2 (CIS) absorber by chemical bath deposition (CBD) method. Thin Zn(O,S) exhibits better power conversion efficiency (PCE) at lower thickness. Enhancement of PCE from 1.5% to 3.9% was observed for electrodeposited CIS photovoltaic device when the buffer layer thickness reduces from 50nm to 20nm. Although the conduction band offset (CBO) at Zn(O,S)/CIS interface are almost identical for both the 20nm and 50nm thick buffer layers, investigation on charge carrier dynamics reveals that the carrier lifetime for the 20nm buffer is much longer than the 50nm buffer. This offers a plausible explanation for the higher Jsc of the device with 20nm buffer layer compared to the device with 50nm buffer layer.",

keywords = "Buffer layer, Charge carrier dynamics, CuInSe, Pump-probe, Solar cell, Zn(O,S)",

author = "Juan Sun and Venkatram Nalla and Mai Nguyen and Yi Ren and Chiam, {Sing Yang} and Yue Wang and Tai, {Kong Fai} and Handong Sun and Nikolay Zheludev and Batabyal, {Sudip K.} and Wong, {Lydia H.}",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd.",

year = "2015",

month = may,

day = "1",

doi = "10.1016/j.solener.2015.03.008",

language = "English",

volume = "115",

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journal = "Solar Energy",

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T1 - Effect of Zn(O,S) buffer layer thickness on charge carrier relaxation dynamics of CuInSe2 solar cell

AU - Sun, Juan

AU - Nalla, Venkatram

AU - Nguyen, Mai

AU - Ren, Yi

AU - Chiam, Sing Yang

AU - Wang, Yue

AU - Tai, Kong Fai

AU - Sun, Handong

AU - Zheludev, Nikolay

AU - Batabyal, Sudip K.

AU - Wong, Lydia H.

PY - 2015/5/1

Y1 - 2015/5/1

N2 - A pinhole free Zn(O,S) buffer layer was deposited on CuInSe2 (CIS) absorber by chemical bath deposition (CBD) method. Thin Zn(O,S) exhibits better power conversion efficiency (PCE) at lower thickness. Enhancement of PCE from 1.5% to 3.9% was observed for electrodeposited CIS photovoltaic device when the buffer layer thickness reduces from 50nm to 20nm. Although the conduction band offset (CBO) at Zn(O,S)/CIS interface are almost identical for both the 20nm and 50nm thick buffer layers, investigation on charge carrier dynamics reveals that the carrier lifetime for the 20nm buffer is much longer than the 50nm buffer. This offers a plausible explanation for the higher Jsc of the device with 20nm buffer layer compared to the device with 50nm buffer layer.

AB - A pinhole free Zn(O,S) buffer layer was deposited on CuInSe2 (CIS) absorber by chemical bath deposition (CBD) method. Thin Zn(O,S) exhibits better power conversion efficiency (PCE) at lower thickness. Enhancement of PCE from 1.5% to 3.9% was observed for electrodeposited CIS photovoltaic device when the buffer layer thickness reduces from 50nm to 20nm. Although the conduction band offset (CBO) at Zn(O,S)/CIS interface are almost identical for both the 20nm and 50nm thick buffer layers, investigation on charge carrier dynamics reveals that the carrier lifetime for the 20nm buffer is much longer than the 50nm buffer. This offers a plausible explanation for the higher Jsc of the device with 20nm buffer layer compared to the device with 50nm buffer layer.

KW - Buffer layer

KW - Charge carrier dynamics

KW - CuInSe

KW - Pump-probe

KW - Solar cell

KW - Zn(O,S)

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