Abstract
Diffusion barrier properties of 10 nm Ru sputtered in N and Ar atmospheres have been assessed. N was found to be dissolved in the Ru film deposited in N atmosphere making it amorphous with ten times higher sheet resistance. Annealing caused effusion of N resulting in crystallization of Ru and a sharp decrease in sheet resistance. The incorporation of N delayed the Ru silicide formation and reduced Cu and Ru diffusion into the Si O2 dielectric layer. These beneficial performances are attributed to dissolved N in the amorphous films and to N grain boundary stuffing in crystallized films.
| Original language | English |
|---|---|
| Article number | 044101 |
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 88 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2006 |
| Externally published | Yes |
ASJC Scopus Subject Areas
- Physics and Astronomy (miscellaneous)