Effects of forward gate bias stressing on the leakage current of AlGaN/GaN high electron mobility transistors

Y. Gao; W. A. Sasangka; C. V. Thompson; C. L. Gan

doi:10.1016/j.microrel.2019.113432

Effects of forward gate bias stressing on the leakage current of AlGaN/GaN high electron mobility transistors

Y. Gao, W. A. Sasangka, C. V. Thompson, C. L. Gan^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) under forward gate bias was studied. During stressing, devices were observed to degrade through an increase in the gate leakage current. The degradation was correlated with a decrease in the Schottky barrier height. Using photon emission microscopy (PEM), transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS), the physical cause of the degradation was identified as localized carbon residue at the AlGaN/Ni gate interface.

Original language	English
Article number	113432
Journal	Microelectronics Reliability
Volume	100-101
DOIs	https://doi.org/10.1016/j.microrel.2019.113432
Publication status	Published - Sept 2019
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2019 Elsevier Ltd

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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title = "Effects of forward gate bias stressing on the leakage current of AlGaN/GaN high electron mobility transistors",

abstract = "Reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) under forward gate bias was studied. During stressing, devices were observed to degrade through an increase in the gate leakage current. The degradation was correlated with a decrease in the Schottky barrier height. Using photon emission microscopy (PEM), transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS), the physical cause of the degradation was identified as localized carbon residue at the AlGaN/Ni gate interface.",

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doi = "10.1016/j.microrel.2019.113432",

language = "English",

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AU - Gao, Y.

AU - Sasangka, W. A.

AU - Thompson, C. V.

AU - Gan, C. L.

PY - 2019/9

Y1 - 2019/9

N2 - Reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) under forward gate bias was studied. During stressing, devices were observed to degrade through an increase in the gate leakage current. The degradation was correlated with a decrease in the Schottky barrier height. Using photon emission microscopy (PEM), transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS), the physical cause of the degradation was identified as localized carbon residue at the AlGaN/Ni gate interface.

AB - Reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) under forward gate bias was studied. During stressing, devices were observed to degrade through an increase in the gate leakage current. The degradation was correlated with a decrease in the Schottky barrier height. Using photon emission microscopy (PEM), transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS), the physical cause of the degradation was identified as localized carbon residue at the AlGaN/Ni gate interface.

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JO - Microelectronics Reliability

JF - Microelectronics Reliability

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Effects of forward gate bias stressing on the leakage current of AlGaN/GaN high electron mobility transistors

Abstract

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ASJC Scopus Subject Areas

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