Effects of MgO doping in ZnO-0.5 mol% V2O5 varistors

H. H. Hng; K. Y. Tse

doi:10.1016/j.ceramint.2007.02.004

Effects of MgO doping in ZnO-0.5 mol% V₂O₅ varistors

H. H. Hng^*, K. Y. Tse

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

The effects of MgO (0-40 mol%) on the microstructure and the electrical properties have been studied in a binary ZnO-0.5 mol% V₂O₅ system. The microstructure of the samples consists mainly of ZnO grains with MgO and γ-Zn₃(VO₄)₂ as the minority secondary phases. MgO is found to be effective as a grain growth inhibitor in controlling the ZnO grain growth, and a more uniform microstructure can be obtained. The non-linear coefficient α value is found to increase with the amount of MgO, and a highest value of 8.7 is obtained for the sample doped with 10 mol% MgO. Further addition of ≥20 mol% MgO decreases the α value.

Original language	English
Pages (from-to)	1153-1157
Number of pages	5
Journal	Ceramics International
Volume	34
Issue number	5
DOIs	https://doi.org/10.1016/j.ceramint.2007.02.004
Publication status	Published - Jul 2008
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

Keywords

B. Microstructure-final
D. MgO
D. ZnO
E. Varistors
VO

Access to Document

10.1016/j.ceramint.2007.02.004

Cite this

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title = "Effects of MgO doping in ZnO-0.5 mol% V2O5 varistors",

abstract = "The effects of MgO (0-40 mol%) on the microstructure and the electrical properties have been studied in a binary ZnO-0.5 mol% V2O5 system. The microstructure of the samples consists mainly of ZnO grains with MgO and γ-Zn3(VO4)2 as the minority secondary phases. MgO is found to be effective as a grain growth inhibitor in controlling the ZnO grain growth, and a more uniform microstructure can be obtained. The non-linear coefficient α value is found to increase with the amount of MgO, and a highest value of 8.7 is obtained for the sample doped with 10 mol% MgO. Further addition of ≥20 mol% MgO decreases the α value.",

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AU - Hng, H. H.

AU - Tse, K. Y.

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N2 - The effects of MgO (0-40 mol%) on the microstructure and the electrical properties have been studied in a binary ZnO-0.5 mol% V2O5 system. The microstructure of the samples consists mainly of ZnO grains with MgO and γ-Zn3(VO4)2 as the minority secondary phases. MgO is found to be effective as a grain growth inhibitor in controlling the ZnO grain growth, and a more uniform microstructure can be obtained. The non-linear coefficient α value is found to increase with the amount of MgO, and a highest value of 8.7 is obtained for the sample doped with 10 mol% MgO. Further addition of ≥20 mol% MgO decreases the α value.

AB - The effects of MgO (0-40 mol%) on the microstructure and the electrical properties have been studied in a binary ZnO-0.5 mol% V2O5 system. The microstructure of the samples consists mainly of ZnO grains with MgO and γ-Zn3(VO4)2 as the minority secondary phases. MgO is found to be effective as a grain growth inhibitor in controlling the ZnO grain growth, and a more uniform microstructure can be obtained. The non-linear coefficient α value is found to increase with the amount of MgO, and a highest value of 8.7 is obtained for the sample doped with 10 mol% MgO. Further addition of ≥20 mol% MgO decreases the α value.

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