Effects of MnO2 doping in V2O5-doped ZnO varistor system

Huey Hoon Hng; Poh Ling Chan

doi:10.1016/S0254-0584(02)00031-7

Effects of MnO₂ doping in V₂O₅-doped ZnO varistor system

Huey Hoon Hng^*, Poh Ling Chan

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Conference article › peer-review

70 Citations (Scopus)

Abstract

The effects of the amount of MnO₂ (0.5-2 mol%) on the microstructure and the electrical properties have been studied in a binary ZnO-0.5 mol% V₂O₅ system. The microstructure of the samples consists mainly of ZnO grains with γ-Zn₃(VO₄)₂ as the minority secondary phase. The cumulative addition of MnO₂ improves the varistor performance by increasing the nonlinear coefficient α. The α-value is found to increase with the amount of MnO₂, and a highest value of 31.8 is obtained for the sample doped with 2 mol% MnO₂.

Original language	English
Pages (from-to)	61-66
Number of pages	6
Journal	Materials Chemistry and Physics
Volume	75
Issue number	1-3
DOIs	https://doi.org/10.1016/S0254-0584(02)00031-7
Publication status	Published - Apr 28 2002
Externally published	Yes
Event	ICMAT 2001 Symposium C (Novel and Advanced Ceramics) - Singapore, Singapore Duration: Apr 28 2002 → …

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics

Keywords

MnO
Nonlinear coefficient
VO-doped ZnO varistors

Access to Document

10.1016/S0254-0584(02)00031-7

Cite this

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title = "Effects of MnO2 doping in V2O5-doped ZnO varistor system",

abstract = "The effects of the amount of MnO2 (0.5-2 mol%) on the microstructure and the electrical properties have been studied in a binary ZnO-0.5 mol% V2O5 system. The microstructure of the samples consists mainly of ZnO grains with γ-Zn3(VO4)2 as the minority secondary phase. The cumulative addition of MnO2 improves the varistor performance by increasing the nonlinear coefficient α. The α-value is found to increase with the amount of MnO2, and a highest value of 31.8 is obtained for the sample doped with 2 mol% MnO2.",

keywords = "MnO, Nonlinear coefficient, VO-doped ZnO varistors",

author = "Hng, {Huey Hoon} and Chan, {Poh Ling}",

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T1 - Effects of MnO2 doping in V2O5-doped ZnO varistor system

AU - Hng, Huey Hoon

AU - Chan, Poh Ling

PY - 2002/4/28

Y1 - 2002/4/28

N2 - The effects of the amount of MnO2 (0.5-2 mol%) on the microstructure and the electrical properties have been studied in a binary ZnO-0.5 mol% V2O5 system. The microstructure of the samples consists mainly of ZnO grains with γ-Zn3(VO4)2 as the minority secondary phase. The cumulative addition of MnO2 improves the varistor performance by increasing the nonlinear coefficient α. The α-value is found to increase with the amount of MnO2, and a highest value of 31.8 is obtained for the sample doped with 2 mol% MnO2.

AB - The effects of the amount of MnO2 (0.5-2 mol%) on the microstructure and the electrical properties have been studied in a binary ZnO-0.5 mol% V2O5 system. The microstructure of the samples consists mainly of ZnO grains with γ-Zn3(VO4)2 as the minority secondary phase. The cumulative addition of MnO2 improves the varistor performance by increasing the nonlinear coefficient α. The α-value is found to increase with the amount of MnO2, and a highest value of 31.8 is obtained for the sample doped with 2 mol% MnO2.

KW - MnO

KW - Nonlinear coefficient

KW - VO-doped ZnO varistors

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JO - Materials Chemistry and Physics

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