Effects of O2 and He on the properties of the trimethyl silane based low-k films

J. Widodo; L. N. Goh; W. Lu; S. G. Mhaisalkar; S. Ong; J. L. Sudijono; L. C. Hsia; P. Y. Tan; K. Y. Zeng

Effects of O₂ and He on the properties of the trimethyl silane based low-k films

J. Widodo^*, L. N. Goh, W. Lu, S. G. Mhaisalkar, S. Ong, J. L. Sudijono, L. C. Hsia, P. Y. Tan, K. Y. Zeng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Plasma enhanced chemical vapor deposited carbon doped oxide films were studied using trimethyl silane precursors with dielectric constant in the range of 2.75 to 3.62. Numerous film properties such as film stresses, hardness, modulus, refractive indices, and chemical bonding were characterized. The results indicated a linear relationship between dielectric constant, and hardness and modulus. The introduction of methyl group in the film reduced its dielectric constant in comparison with silica.

Original language	English
Pages (from-to)	1030-1036
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	3
Publication status	Published - May 2004
Externally published	Yes

ASJC Scopus Subject Areas

Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

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title = "Effects of O2 and He on the properties of the trimethyl silane based low-k films",

abstract = "Plasma enhanced chemical vapor deposited carbon doped oxide films were studied using trimethyl silane precursors with dielectric constant in the range of 2.75 to 3.62. Numerous film properties such as film stresses, hardness, modulus, refractive indices, and chemical bonding were characterized. The results indicated a linear relationship between dielectric constant, and hardness and modulus. The introduction of methyl group in the film reduced its dielectric constant in comparison with silica.",

author = "J. Widodo and Goh, {L. N.} and W. Lu and Mhaisalkar, {S. G.} and S. Ong and Sudijono, {J. L.} and Hsia, {L. C.} and Tan, {P. Y.} and Zeng, {K. Y.}",

year = "2004",

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language = "English",

volume = "22",

pages = "1030--1036",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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TY - JOUR

T1 - Effects of O2 and He on the properties of the trimethyl silane based low-k films

AU - Widodo, J.

AU - Goh, L. N.

AU - Lu, W.

AU - Mhaisalkar, S. G.

AU - Ong, S.

AU - Sudijono, J. L.

AU - Hsia, L. C.

AU - Tan, P. Y.

AU - Zeng, K. Y.

PY - 2004/5

Y1 - 2004/5

N2 - Plasma enhanced chemical vapor deposited carbon doped oxide films were studied using trimethyl silane precursors with dielectric constant in the range of 2.75 to 3.62. Numerous film properties such as film stresses, hardness, modulus, refractive indices, and chemical bonding were characterized. The results indicated a linear relationship between dielectric constant, and hardness and modulus. The introduction of methyl group in the film reduced its dielectric constant in comparison with silica.

AB - Plasma enhanced chemical vapor deposited carbon doped oxide films were studied using trimethyl silane precursors with dielectric constant in the range of 2.75 to 3.62. Numerous film properties such as film stresses, hardness, modulus, refractive indices, and chemical bonding were characterized. The results indicated a linear relationship between dielectric constant, and hardness and modulus. The introduction of methyl group in the film reduced its dielectric constant in comparison with silica.

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M3 - Article

AN - SCOPUS:3242719714

SN - 1071-1023

VL - 22

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Effects of O₂ and He on the properties of the trimethyl silane based low-k films

Abstract

ASJC Scopus Subject Areas

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