Effects of pulsed current on electromigration lifetime

M. K. Lim; C. L. Gan; T. L. Tan; Y. C. Ee; C. M. Ng; B. C. Zhang; J. B. Tan

doi:10.1109/IPFA.2008.4588157

Effects of pulsed current on electromigration lifetime

M. K. Lim, C. L. Gan, T. L. Tan, Y. C. Ee, C. M. Ng, B. C. Zhang, J. B. Tan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Asymmetrical Cu interconnect structure, where one end of the metal-2 (M2) test line is connected to M1 while the opposite end is connected to M3, was subjected to very long periods of bipolar pulsed current (i.e. 2, 16 and 48 hours) in this study. The median-time-to-failure (t₅₀) of the samples was found to depend on the direction of electron current in the first half-period, and t₅₀ of samples that were subjected to direct current (D.C.) that flow upstream or downstream. Bipolar pulsed current stressed samples showed improvement in lifetimes as compared to that of D.C. stressed samples only when the half-period of bipolar pulsed current was shorter than the t₅₀ of D.C. stressed samples.

Original language	English
Title of host publication	2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
DOIs	https://doi.org/10.1109/IPFA.2008.4588157
Publication status	Published - 2008
Externally published	Yes
Event	2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA - Singapore, Singapore Duration: Jul 7 2008 → Jul 11 2008

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Country/Territory	Singapore
City	Singapore
Period	7/7/08 → 7/11/08

ASJC Scopus Subject Areas

General Engineering

Access to Document

10.1109/IPFA.2008.4588157

Cite this

Lim, M. K., Gan, C. L., Tan, T. L., Ee, Y. C., Ng, C. M., Zhang, B. C., & Tan, J. B. (2008). Effects of pulsed current on electromigration lifetime. In 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA Article 4588157 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2008.4588157

@inproceedings{b888613dc28544dd896f7004701cbb52,

title = "Effects of pulsed current on electromigration lifetime",

abstract = "Asymmetrical Cu interconnect structure, where one end of the metal-2 (M2) test line is connected to M1 while the opposite end is connected to M3, was subjected to very long periods of bipolar pulsed current (i.e. 2, 16 and 48 hours) in this study. The median-time-to-failure (t50) of the samples was found to depend on the direction of electron current in the first half-period, and t50 of samples that were subjected to direct current (D.C.) that flow upstream or downstream. Bipolar pulsed current stressed samples showed improvement in lifetimes as compared to that of D.C. stressed samples only when the half-period of bipolar pulsed current was shorter than the t50 of D.C. stressed samples.",

author = "Lim, \{M. K.\} and Gan, \{C. L.\} and Tan, \{T. L.\} and Ee, \{Y. C.\} and Ng, \{C. M.\} and Zhang, \{B. C.\} and Tan, \{J. B.\}",

year = "2008",

doi = "10.1109/IPFA.2008.4588157",

language = "English",

isbn = "1424420393",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

booktitle = "2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

note = "2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA ; Conference date: 07-07-2008 Through 11-07-2008",

}

Lim, MK, Gan, CL, Tan, TL, Ee, YC, Ng, CM, Zhang, BC & Tan, JB 2008, Effects of pulsed current on electromigration lifetime. in 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA., 4588157, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, Singapore, Singapore, 7/7/08. https://doi.org/10.1109/IPFA.2008.4588157

Effects of pulsed current on electromigration lifetime. / Lim, M. K.; Gan, C. L.; Tan, T. L. et al.
2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA. 2008. 4588157 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Effects of pulsed current on electromigration lifetime

AU - Lim, M. K.

AU - Gan, C. L.

AU - Tan, T. L.

AU - Ee, Y. C.

AU - Ng, C. M.

AU - Zhang, B. C.

AU - Tan, J. B.

PY - 2008

Y1 - 2008

N2 - Asymmetrical Cu interconnect structure, where one end of the metal-2 (M2) test line is connected to M1 while the opposite end is connected to M3, was subjected to very long periods of bipolar pulsed current (i.e. 2, 16 and 48 hours) in this study. The median-time-to-failure (t50) of the samples was found to depend on the direction of electron current in the first half-period, and t50 of samples that were subjected to direct current (D.C.) that flow upstream or downstream. Bipolar pulsed current stressed samples showed improvement in lifetimes as compared to that of D.C. stressed samples only when the half-period of bipolar pulsed current was shorter than the t50 of D.C. stressed samples.

AB - Asymmetrical Cu interconnect structure, where one end of the metal-2 (M2) test line is connected to M1 while the opposite end is connected to M3, was subjected to very long periods of bipolar pulsed current (i.e. 2, 16 and 48 hours) in this study. The median-time-to-failure (t50) of the samples was found to depend on the direction of electron current in the first half-period, and t50 of samples that were subjected to direct current (D.C.) that flow upstream or downstream. Bipolar pulsed current stressed samples showed improvement in lifetimes as compared to that of D.C. stressed samples only when the half-period of bipolar pulsed current was shorter than the t50 of D.C. stressed samples.

UR - http://www.scopus.com/inward/record.url?scp=51949109097&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51949109097&partnerID=8YFLogxK

U2 - 10.1109/IPFA.2008.4588157

DO - 10.1109/IPFA.2008.4588157

M3 - Conference contribution

AN - SCOPUS:51949109097

SN - 1424420393

SN - 9781424420391

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

BT - 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

T2 - 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Y2 - 7 July 2008 through 11 July 2008

ER -

Lim MK, Gan CL, Tan TL, Ee YC, Ng CM, Zhang BC et al. Effects of pulsed current on electromigration lifetime. In 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA. 2008. 4588157. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2008.4588157

Effects of pulsed current on electromigration lifetime

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