Effects of Si(001) surface amorphization on ErSi2 thin film

E. J. Tan; M. L. Kon; K. L. Pey; P. S. Lee; Y. W. Zhang; W. D. Wang; D. Z. Chi

doi:10.1016/j.tsf.2005.09.067

Effects of Si(001) surface amorphization on ErSi₂ thin film

E. J. Tan, M. L. Kon, K. L. Pey, P. S. Lee, Y. W. Zhang, W. D. Wang, D. Z. Chi^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

In a materials study of ErSi₂/Si(001) as a potential candidate for Schottky source/drain NMOS application, the properties of ErSi₂ thin film were investigated with varying degrees of Si(001) surface amorphization. The amorphization was carried out by in situ Ar plasma cleaning and Si pre-amorphization implant. It was found that the ErSi₂ thin film becomes smoother but less textured and less epitaxial with Si(001) with increasing degree of the Si surface amorphization. In addition, an increased oxygen penetration during rapid thermal annealing occurs with increasing substrate amorphization.

Original language	English
Pages (from-to)	157-160
Number of pages	4
Journal	Thin Solid Films
Volume	504
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.09.067
Publication status	Published - May 10 2006
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Keywords

Amorphization
Erbium silicide
Morphology
Thin film

Access to Document

10.1016/j.tsf.2005.09.067

Cite this

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title = "Effects of Si(001) surface amorphization on ErSi2 thin film",

abstract = "In a materials study of ErSi2/Si(001) as a potential candidate for Schottky source/drain NMOS application, the properties of ErSi2 thin film were investigated with varying degrees of Si(001) surface amorphization. The amorphization was carried out by in situ Ar plasma cleaning and Si pre-amorphization implant. It was found that the ErSi2 thin film becomes smoother but less textured and less epitaxial with Si(001) with increasing degree of the Si surface amorphization. In addition, an increased oxygen penetration during rapid thermal annealing occurs with increasing substrate amorphization.",

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AU - Tan, E. J.

AU - Kon, M. L.

AU - Pey, K. L.

AU - Lee, P. S.

AU - Zhang, Y. W.

AU - Wang, W. D.

AU - Chi, D. Z.

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AB - In a materials study of ErSi2/Si(001) as a potential candidate for Schottky source/drain NMOS application, the properties of ErSi2 thin film were investigated with varying degrees of Si(001) surface amorphization. The amorphization was carried out by in situ Ar plasma cleaning and Si pre-amorphization implant. It was found that the ErSi2 thin film becomes smoother but less textured and less epitaxial with Si(001) with increasing degree of the Si surface amorphization. In addition, an increased oxygen penetration during rapid thermal annealing occurs with increasing substrate amorphization.

KW - Amorphization

KW - Erbium silicide

KW - Morphology

KW - Thin film

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