Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1-xGex substrate

Y. S. Li; P. S. Lee; K. L. Pey

doi:10.1016/j.tsf.2004.05.025

Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si_1-xGe_x substrate

Y. S. Li, P. S. Lee, K. L. Pey^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Ti/Co and Co/Ti bilayered systems were used for the formation of Co germanosilicide on polysilicon buffered poly-Si_1-xGe_x (x=0.2, 0.3) gate stacks. In both cases, substantial Ge was found to segregate to the grain boundaries at the surface of the polycrystalline silicide (i.e., CoSiGe) films, resulting in a substantial degradation in the sheet resistance and a poor quality of the silicide films. It is shown that Ge is probably being expelled from the poly-SiGe grain and segregates to the grain boundaries during the annealing process, leading to the undesirable sheet resistance and poor film morphology observed from the Co germanosilicide films.

Original language	English
Pages (from-to)	209-212
Number of pages	4
Journal	Thin Solid Films
Volume	462-463
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.tsf.2004.05.025
Publication status	Published - Sept 2004
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Keywords

Cobalt silicidation
Poly-SiGe

Access to Document

10.1016/j.tsf.2004.05.025

Cite this

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title = "Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1-xGex substrate",

abstract = "Ti/Co and Co/Ti bilayered systems were used for the formation of Co germanosilicide on polysilicon buffered poly-Si1-xGex (x=0.2, 0.3) gate stacks. In both cases, substantial Ge was found to segregate to the grain boundaries at the surface of the polycrystalline silicide (i.e., CoSiGe) films, resulting in a substantial degradation in the sheet resistance and a poor quality of the silicide films. It is shown that Ge is probably being expelled from the poly-SiGe grain and segregates to the grain boundaries during the annealing process, leading to the undesirable sheet resistance and poor film morphology observed from the Co germanosilicide films.",

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T1 - Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1-xGex substrate

AU - Li, Y. S.

AU - Lee, P. S.

AU - Pey, K. L.

PY - 2004/9

Y1 - 2004/9

N2 - Ti/Co and Co/Ti bilayered systems were used for the formation of Co germanosilicide on polysilicon buffered poly-Si1-xGex (x=0.2, 0.3) gate stacks. In both cases, substantial Ge was found to segregate to the grain boundaries at the surface of the polycrystalline silicide (i.e., CoSiGe) films, resulting in a substantial degradation in the sheet resistance and a poor quality of the silicide films. It is shown that Ge is probably being expelled from the poly-SiGe grain and segregates to the grain boundaries during the annealing process, leading to the undesirable sheet resistance and poor film morphology observed from the Co germanosilicide films.

AB - Ti/Co and Co/Ti bilayered systems were used for the formation of Co germanosilicide on polysilicon buffered poly-Si1-xGex (x=0.2, 0.3) gate stacks. In both cases, substantial Ge was found to segregate to the grain boundaries at the surface of the polycrystalline silicide (i.e., CoSiGe) films, resulting in a substantial degradation in the sheet resistance and a poor quality of the silicide films. It is shown that Ge is probably being expelled from the poly-SiGe grain and segregates to the grain boundaries during the annealing process, leading to the undesirable sheet resistance and poor film morphology observed from the Co germanosilicide films.

KW - Cobalt silicidation

KW - Poly-SiGe

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