Electret mechanism, hysteresis, and ambient performance of sol-gel silica gate dielectrics in pentacene field-effect transistors

T. Cahyadi, H. S. Tan, S. G. Mhaisalkar*, P. S. Lee, F. Boey, Z. K. Chen, C. M. Ng, V. R. Rao, G. J. Qi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Electret mechanism, hysteresis, and ambient performance of sol-gel silica gate dielectrics in pentacene field-effect transistors'. Together they form a unique fingerprint.

Material Science

Keyphrases