Electrical transport in carbon nanotube intermolecular p-n junctions

Hong Li, Qing Zhang*, Chin Chong Yap, Beng Kang Tay

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Thermionic emission and tunneling are found to be the dominant transport mechanisms under the forward and reverse bias conditions, respectively, in a single-walled carbon nanotube based intermolecular p-n junction. At a reverse bias, the kink point on the plot of ln(I/V2) vs 1/V indicates that the transport mechanism experiences a transition from direct tunneling to the Fowler-Nordheim tunneling through the junction barrier. In contrast, the Arrhenius plot of the I-V curve at forward biases shows that tunneling dominates over the thermionic emission below 50 K.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan, Province of China
Duration: Jun 21 2011Jun 24 2011

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Conference

Conference4th IEEE International Nanoelectronics Conference, INEC 2011
Country/TerritoryTaiwan, Province of China
CityTao-Yuan
Period6/21/116/24/11

ASJC Scopus Subject Areas

  • Electrical and Electronic Engineering

Keywords

  • carbon nanotubes
  • intermolecular p-n junction
  • transport mechanism

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