Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Qixun Guo; Yu Wu; Longxiang Xu; Yan Gong; Yunbo Ou; Yang Liu; Leilei Li; Yu Yan; Gang Han; Dongwei Wang; Lihua Wang; Shibing Long; Bowei Zhang; Xun Cao; Shanwu Yang; Xuemin Wang; Yizhong Huang; Tao Liu; Guanghua Yu; Ke He; Jiao Teng

doi:10.1088/0256-307X/37/5/057301

Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Qixun Guo, Yu Wu, Longxiang Xu, Yan Gong, Yunbo Ou, Yang Liu, Leilei Li, Yu Yan, Gang Han, Dongwei Wang, Lihua Wang, Shibing Long, Bowei Zhang, Xun Cao, Shanwu Yang, Xuemin Wang, Yizhong Huang, Tao Liu, Guanghua Yu, Ke HeJiao Teng^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is the key to the practical applications of TIs. Here we show that wafer-sized Bi ₂ Te ₃ family TI and magnetic TI films with decent quality and well-controlled composition and properties can be prepared on amorphous SiO ₂ /Si substrates by magnetron cosputtering. The SiO ₂ /Si substrates enable us to electrically tune (Bi _1-x Sb_x )₂ Te ₃ and Cr-doped (Bi _1-x Sb_x )₂ Te ₃ TI films between p-type and n-type behavior and thus study the phenomena associated with topological surface states, such as the quantum anomalous Hall effect (QAHE). This work significantly facilitates the fabrication of TI-based devices for electronic and spintronic applications.

Original language	English
Article number	057301
Journal	Chinese Physics Letters
Volume	37
Issue number	5
DOIs	https://doi.org/10.1088/0256-307X/37/5/057301
Publication status	Published - May 2020
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2020 Chinese Physical Society and IOP Publishing Ltd.

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1088/0256-307X/37/5/057301

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Guo, Q., Wu, Y., Xu, L., Gong, Y., Ou, Y., Liu, Y., Li, L., Yan, Y., Han, G., Wang, D., Wang, L., Long, S., Zhang, B., Cao, X., Yang, S., Wang, X., Huang, Y., Liu, T., Yu, G., ... Teng, J. (2020). Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering. Chinese Physics Letters, 37(5), Article 057301. https://doi.org/10.1088/0256-307X/37/5/057301

@article{93fea9f5fb434ee0ac27bfff5a9a1848,

title = "Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering",

abstract = "Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is the key to the practical applications of TIs. Here we show that wafer-sized Bi 2 Te 3 family TI and magnetic TI films with decent quality and well-controlled composition and properties can be prepared on amorphous SiO 2 /Si substrates by magnetron cosputtering. The SiO 2 /Si substrates enable us to electrically tune (Bi 1-x Sbx )2 Te 3 and Cr-doped (Bi 1-x Sbx )2 Te 3 TI films between p-type and n-type behavior and thus study the phenomena associated with topological surface states, such as the quantum anomalous Hall effect (QAHE). This work significantly facilitates the fabrication of TI-based devices for electronic and spintronic applications.",

author = "Qixun Guo and Yu Wu and Longxiang Xu and Yan Gong and Yunbo Ou and Yang Liu and Leilei Li and Yu Yan and Gang Han and Dongwei Wang and Lihua Wang and Shibing Long and Bowei Zhang and Xun Cao and Shanwu Yang and Xuemin Wang and Yizhong Huang and Tao Liu and Guanghua Yu and Ke He and Jiao Teng",

note = "Publisher Copyright: {\textcopyright} 2020 Chinese Physical Society and IOP Publishing Ltd.",

year = "2020",

month = may,

doi = "10.1088/0256-307X/37/5/057301",

language = "English",

volume = "37",

journal = "Chinese Physics Letters",

issn = "0256-307X",

publisher = "IOP Publishing Ltd.",

number = "5",

}

Guo, Q, Wu, Y, Xu, L, Gong, Y, Ou, Y, Liu, Y, Li, L, Yan, Y, Han, G, Wang, D, Wang, L, Long, S, Zhang, B, Cao, X, Yang, S, Wang, X, Huang, Y, Liu, T, Yu, G, He, K & Teng, J 2020, 'Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering', Chinese Physics Letters, vol. 37, no. 5, 057301. https://doi.org/10.1088/0256-307X/37/5/057301

TY - JOUR

T1 - Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

AU - Guo, Qixun

AU - Wu, Yu

AU - Xu, Longxiang

AU - Gong, Yan

AU - Ou, Yunbo

AU - Liu, Yang

AU - Li, Leilei

AU - Yan, Yu

AU - Han, Gang

AU - Wang, Dongwei

AU - Wang, Lihua

AU - Long, Shibing

AU - Zhang, Bowei

AU - Cao, Xun

AU - Yang, Shanwu

AU - Wang, Xuemin

AU - Huang, Yizhong

AU - Liu, Tao

AU - Yu, Guanghua

AU - He, Ke

AU - Teng, Jiao

PY - 2020/5

Y1 - 2020/5

N2 - Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is the key to the practical applications of TIs. Here we show that wafer-sized Bi 2 Te 3 family TI and magnetic TI films with decent quality and well-controlled composition and properties can be prepared on amorphous SiO 2 /Si substrates by magnetron cosputtering. The SiO 2 /Si substrates enable us to electrically tune (Bi 1-x Sbx )2 Te 3 and Cr-doped (Bi 1-x Sbx )2 Te 3 TI films between p-type and n-type behavior and thus study the phenomena associated with topological surface states, such as the quantum anomalous Hall effect (QAHE). This work significantly facilitates the fabrication of TI-based devices for electronic and spintronic applications.

AB - Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is the key to the practical applications of TIs. Here we show that wafer-sized Bi 2 Te 3 family TI and magnetic TI films with decent quality and well-controlled composition and properties can be prepared on amorphous SiO 2 /Si substrates by magnetron cosputtering. The SiO 2 /Si substrates enable us to electrically tune (Bi 1-x Sbx )2 Te 3 and Cr-doped (Bi 1-x Sbx )2 Te 3 TI films between p-type and n-type behavior and thus study the phenomena associated with topological surface states, such as the quantum anomalous Hall effect (QAHE). This work significantly facilitates the fabrication of TI-based devices for electronic and spintronic applications.

UR - http://www.scopus.com/inward/record.url?scp=85086030263&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85086030263&partnerID=8YFLogxK

U2 - 10.1088/0256-307X/37/5/057301

DO - 10.1088/0256-307X/37/5/057301

M3 - Article

AN - SCOPUS:85086030263

SN - 0256-307X

VL - 37

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 5

M1 - 057301

ER -

Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Abstract

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