Electrochemical Oxidation in AlGaN/GaN-on-Si High Electron Mobility Transistors

C. L. Gan; W. A. Sasangka; C. V. Thompson

doi:10.1109/EDTM.2019.8731316

Electrochemical Oxidation in AlGaN/GaN-on-Si High Electron Mobility Transistors

C. L. Gan, W. A. Sasangka, C. V. Thompson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Pit formation via electrochemical oxidation has been identified as one of the critical degradation mechanisms in AlGaN/GaN high electron mobility transistors. It is known to be strongly influenced by the electric field, temperature and stressing environment. In this paper, we will extend this understanding to include the role of threading dislocations, current density and the density of the passivation layer.

Original language	English
Title of host publication	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	71-73
Number of pages	3
ISBN (Electronic)	9781538665084
DOIs	https://doi.org/10.1109/EDTM.2019.8731316
Publication status	Published - Mar 2019
Externally published	Yes
Event	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore Duration: Mar 12 2019 → Mar 15 2019

Publication series

Name	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Country/Territory	Singapore
City	Singapore
Period	3/12/19 → 3/15/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

ASJC Scopus Subject Areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation
Hardware and Architecture

Keywords

AlGaN/GaN HEMTs
electrochemical oxidation
reliability
threading dislocations

Access to Document

10.1109/EDTM.2019.8731316

Cite this

Gan, C. L., Sasangka, W. A., & Thompson, C. V. (2019). Electrochemical Oxidation in AlGaN/GaN-on-Si High Electron Mobility Transistors. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 71-73). Article 8731316 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731316

@inproceedings{09d63229c56c4b6c91a66a1a8328647e,

title = "Electrochemical Oxidation in AlGaN/GaN-on-Si High Electron Mobility Transistors",

abstract = "Pit formation via electrochemical oxidation has been identified as one of the critical degradation mechanisms in AlGaN/GaN high electron mobility transistors. It is known to be strongly influenced by the electric field, temperature and stressing environment. In this paper, we will extend this understanding to include the role of threading dislocations, current density and the density of the passivation layer.",

keywords = "AlGaN/GaN HEMTs, electrochemical oxidation, reliability, threading dislocations",

author = "Gan, {C. L.} and Sasangka, {W. A.} and Thompson, {C. V.}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",

year = "2019",

month = mar,

doi = "10.1109/EDTM.2019.8731316",

language = "English",

series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "71--73",

booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

address = "United States",

}

Gan, CL, Sasangka, WA & Thompson, CV 2019, Electrochemical Oxidation in AlGaN/GaN-on-Si High Electron Mobility Transistors. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731316, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 71-73, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 3/12/19. https://doi.org/10.1109/EDTM.2019.8731316

Electrochemical Oxidation in AlGaN/GaN-on-Si High Electron Mobility Transistors. / Gan, C. L.; Sasangka, W. A.; Thompson, C. V.
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 71-73 8731316 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Electrochemical Oxidation in AlGaN/GaN-on-Si High Electron Mobility Transistors

AU - Gan, C. L.

AU - Sasangka, W. A.

AU - Thompson, C. V.

PY - 2019/3

Y1 - 2019/3

N2 - Pit formation via electrochemical oxidation has been identified as one of the critical degradation mechanisms in AlGaN/GaN high electron mobility transistors. It is known to be strongly influenced by the electric field, temperature and stressing environment. In this paper, we will extend this understanding to include the role of threading dislocations, current density and the density of the passivation layer.

AB - Pit formation via electrochemical oxidation has been identified as one of the critical degradation mechanisms in AlGaN/GaN high electron mobility transistors. It is known to be strongly influenced by the electric field, temperature and stressing environment. In this paper, we will extend this understanding to include the role of threading dislocations, current density and the density of the passivation layer.

KW - AlGaN/GaN HEMTs

KW - electrochemical oxidation

KW - reliability

KW - threading dislocations

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DO - 10.1109/EDTM.2019.8731316

M3 - Conference contribution

AN - SCOPUS:85067827505

T3 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

SP - 71

EP - 73

BT - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Y2 - 12 March 2019 through 15 March 2019

ER -

Gan CL, Sasangka WA, Thompson CV. Electrochemical Oxidation in AlGaN/GaN-on-Si High Electron Mobility Transistors. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 71-73. 8731316. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). doi: 10.1109/EDTM.2019.8731316

Electrochemical Oxidation in AlGaN/GaN-on-Si High Electron Mobility Transistors

Abstract

Publication series

Conference

Bibliographical note

ASJC Scopus Subject Areas

Keywords

Access to Document

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Cite this