Electromigration in copper damascene interconnects: Reservoir effects and failure analysis

Wei Shao; A. V. Vairagar; Chih Hang Tung; Ze Liang Xie; Ahila Krishnamoorthy; S. G. Mhaisalkar

doi:10.1016/j.surfcoat.2004.10.090

Electromigration in copper damascene interconnects: Reservoir effects and failure analysis

Wei Shao^*, A. V. Vairagar, Chih Hang Tung, Ze Liang Xie, Ahila Krishnamoorthy, S. G. Mhaisalkar

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

Electromigration in dual damascene copper interconnects was investigated using package level electromigration tests and failure analysis techniques. Interface diffusion along Cu/Si₃N₄ interface was found to be the dominant electromigration path. Effect of reservoir at the copper via region on electromigration performance was studied using via-fed two-layer test structures with various extension lengths above the via. Improvement in electromigration failure times was observed with increasing reservoir length, consistent with the mechanism of vacancy movement along the Cu/Si₃N₄ interface. Electromigration mechanism and the reservoir effect are discussed in detail.

Original language	English
Pages (from-to)	257-261
Number of pages	5
Journal	Surface and Coatings Technology
Volume	198
Issue number	1-3 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.surfcoat.2004.10.090
Publication status	Published - Aug 1 2005
Externally published	Yes

ASJC Scopus Subject Areas

General Chemistry
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Keywords

Cu/SiN interface
Damascene copper interconnects
Electromigration

Access to Document

10.1016/j.surfcoat.2004.10.090

Cite this

@article{9fa5a72aa8e14919889a3ca56a38cd0d,

title = "Electromigration in copper damascene interconnects: Reservoir effects and failure analysis",

abstract = "Electromigration in dual damascene copper interconnects was investigated using package level electromigration tests and failure analysis techniques. Interface diffusion along Cu/Si3N4 interface was found to be the dominant electromigration path. Effect of reservoir at the copper via region on electromigration performance was studied using via-fed two-layer test structures with various extension lengths above the via. Improvement in electromigration failure times was observed with increasing reservoir length, consistent with the mechanism of vacancy movement along the Cu/Si3N4 interface. Electromigration mechanism and the reservoir effect are discussed in detail.",

keywords = "Cu/SiN interface, Damascene copper interconnects, Electromigration",

author = "Wei Shao and Vairagar, {A. V.} and Tung, {Chih Hang} and Xie, {Ze Liang} and Ahila Krishnamoorthy and Mhaisalkar, {S. G.}",

year = "2005",

month = aug,

day = "1",

doi = "10.1016/j.surfcoat.2004.10.090",

language = "English",

volume = "198",

pages = "257--261",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier",

number = "1-3 SPEC. ISS.",

}

TY - JOUR

T1 - Electromigration in copper damascene interconnects

T2 - Reservoir effects and failure analysis

AU - Shao, Wei

AU - Vairagar, A. V.

AU - Tung, Chih Hang

AU - Xie, Ze Liang

AU - Krishnamoorthy, Ahila

AU - Mhaisalkar, S. G.

PY - 2005/8/1

Y1 - 2005/8/1

N2 - Electromigration in dual damascene copper interconnects was investigated using package level electromigration tests and failure analysis techniques. Interface diffusion along Cu/Si3N4 interface was found to be the dominant electromigration path. Effect of reservoir at the copper via region on electromigration performance was studied using via-fed two-layer test structures with various extension lengths above the via. Improvement in electromigration failure times was observed with increasing reservoir length, consistent with the mechanism of vacancy movement along the Cu/Si3N4 interface. Electromigration mechanism and the reservoir effect are discussed in detail.

AB - Electromigration in dual damascene copper interconnects was investigated using package level electromigration tests and failure analysis techniques. Interface diffusion along Cu/Si3N4 interface was found to be the dominant electromigration path. Effect of reservoir at the copper via region on electromigration performance was studied using via-fed two-layer test structures with various extension lengths above the via. Improvement in electromigration failure times was observed with increasing reservoir length, consistent with the mechanism of vacancy movement along the Cu/Si3N4 interface. Electromigration mechanism and the reservoir effect are discussed in detail.

KW - Cu/SiN interface

KW - Damascene copper interconnects

KW - Electromigration

UR - http://www.scopus.com/inward/record.url?scp=20744438951&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20744438951&partnerID=8YFLogxK

U2 - 10.1016/j.surfcoat.2004.10.090

DO - 10.1016/j.surfcoat.2004.10.090

M3 - Article

AN - SCOPUS:20744438951

SN - 0257-8972

VL - 198

SP - 257

EP - 261

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

IS - 1-3 SPEC. ISS.

ER -

Electromigration in copper damascene interconnects: Reservoir effects and failure analysis

Abstract

ASJC Scopus Subject Areas

Keywords

Access to Document

Other files and links

Fingerprint

Cite this