Electromigration of lower and upper Cu lines in dual-damascene Cu interconnects

Ahila Krishnamoorthy; Guo Qiang; Anand V. Vairagar; Subodh Mhaisalkar

doi:10.1557/proc-766-e3.13

Electromigration of lower and upper Cu lines in dual-damascene Cu interconnects

Ahila Krishnamoorthy^*, Guo Qiang, Anand V. Vairagar, Subodh Mhaisalkar

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

Electromigration in upper M2 and lower M1 Cu lines in dual damascene interconnects was investigated by using two types of via terminated structures. Two different types of failures termed as abrupt and gradual failures were observed. Electromigration failures in M2 were mostly by gradual failures, while abrupt failures dominated in M1. Significantly different types of voids were observed in M1 as compared to those in M2, though similar resistance change was observed. Experimentally calculated activation energies for M1 and M2 indicated interfacial electromigration. Activation energy of M1 was found to be much lower than that of M2. This clearly demonstrates the asymmetry of electromigration in M2 and M1 Cu lines in dual damascene interconnects.

Original language	English
Pages (from-to)	133-138
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	766
DOIs	https://doi.org/10.1557/proc-766-e3.13
Publication status	Published - 2003
Externally published	Yes
Event	Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 - San Francisco, CA, United States Duration: Apr 21 2003 → Apr 25 2003

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Electromigration of lower and upper Cu lines in dual-damascene Cu interconnects",

abstract = "Electromigration in upper M2 and lower M1 Cu lines in dual damascene interconnects was investigated by using two types of via terminated structures. Two different types of failures termed as abrupt and gradual failures were observed. Electromigration failures in M2 were mostly by gradual failures, while abrupt failures dominated in M1. Significantly different types of voids were observed in M1 as compared to those in M2, though similar resistance change was observed. Experimentally calculated activation energies for M1 and M2 indicated interfacial electromigration. Activation energy of M1 was found to be much lower than that of M2. This clearly demonstrates the asymmetry of electromigration in M2 and M1 Cu lines in dual damascene interconnects.",

author = "Ahila Krishnamoorthy and Guo Qiang and Vairagar, {Anand V.} and Subodh Mhaisalkar",

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doi = "10.1557/proc-766-e3.13",

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journal = "Materials Research Society Symposium - Proceedings",

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TY - JOUR

T1 - Electromigration of lower and upper Cu lines in dual-damascene Cu interconnects

AU - Krishnamoorthy, Ahila

AU - Qiang, Guo

AU - Vairagar, Anand V.

AU - Mhaisalkar, Subodh

PY - 2003

Y1 - 2003

N2 - Electromigration in upper M2 and lower M1 Cu lines in dual damascene interconnects was investigated by using two types of via terminated structures. Two different types of failures termed as abrupt and gradual failures were observed. Electromigration failures in M2 were mostly by gradual failures, while abrupt failures dominated in M1. Significantly different types of voids were observed in M1 as compared to those in M2, though similar resistance change was observed. Experimentally calculated activation energies for M1 and M2 indicated interfacial electromigration. Activation energy of M1 was found to be much lower than that of M2. This clearly demonstrates the asymmetry of electromigration in M2 and M1 Cu lines in dual damascene interconnects.

AB - Electromigration in upper M2 and lower M1 Cu lines in dual damascene interconnects was investigated by using two types of via terminated structures. Two different types of failures termed as abrupt and gradual failures were observed. Electromigration failures in M2 were mostly by gradual failures, while abrupt failures dominated in M1. Significantly different types of voids were observed in M1 as compared to those in M2, though similar resistance change was observed. Experimentally calculated activation energies for M1 and M2 indicated interfacial electromigration. Activation energy of M1 was found to be much lower than that of M2. This clearly demonstrates the asymmetry of electromigration in M2 and M1 Cu lines in dual damascene interconnects.

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DO - 10.1557/proc-766-e3.13

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SN - 0272-9172

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JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003

Y2 - 21 April 2003 through 25 April 2003

ER -

Electromigration of lower and upper Cu lines in dual-damascene Cu interconnects

Abstract

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