Abstract
Electron emissions from arrays of silicon tips coated with barium strontium titanate (BST) (Ba0.67Sr0.33)TiO3 ferroelectric thin film have been investigated. Sol-gel technique was used to prepare the (Ba0.67Sr0.33)TiO3 ferroelectric solution. A conformai and stable (Ba0.67Sr0.33)TiO3 thin film coating of ∼30 nm on silicon tips was achieved by spin coating and thermal annealing. Silicon tips coated with BST ferroelectric film show considerable improvement in electron emission. The coated tips have low turn-on electric fields ranging from 4 to 10 V/μm, which are significantly lower than that of the uncoated silicon tips with turn-on electric field of ∼70 V/μm. Fowler-Nordheim (F-N) plots of the emission data confirm that the emission conformed to F-N emission behavior and indicate that the coated silicon tips have a lower work function than the uncoated silicon tips. Sol-gel ferroelectric thin film coating is an efficient and practical way to improve silicon tip emission behavior.
| Original language | English |
|---|---|
| Pages (from-to) | 1073-1076 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 19 |
| Issue number | 3 |
| Publication status | Published - May 2001 |
| Externally published | Yes |
| Event | 13th International Vaccum Microelectronics Conference - Guangzhou, China Duration: Aug 14 2000 → Aug 17 2000 |
ASJC Scopus Subject Areas
- Condensed Matter Physics
- Electrical and Electronic Engineering