Engineering atomic defects in hexagonal boron nitride via resonant optical excitation of phonons

M. Mehdi Jadidi; Cecilia Y. Chen; Baichang Li; Jared S. Ginsberg; Sang Hoon Chae; Chaitali Joshi; Gauri Patwardhan; Kenji Watanabe; Takashi Taniguchi; James Hone; Alexander L. Gaeta

doi:10.1364/CLEO_QELS.2020.FF2Q.6

Engineering atomic defects in hexagonal boron nitride via resonant optical excitation of phonons

M. Mehdi Jadidi^*, Cecilia Y. Chen, Baichang Li, Jared S. Ginsberg, Sang Hoon Chae, Chaitali Joshi, Gauri Patwardhan, Kenji Watanabe, Takashi Taniguchi, James Hone, Alexander L. Gaeta

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We introduce an approach to engineer defects in hBN using intense pulses resonant with phonons at 7.3 µm. Such defects are highly subwavelength (< 30 nm) with an alignment sensitive to the polarization.

Original language	English
Title of host publication	CLEO
Subtitle of host publication	QELS_Fundamental Science, CLEO_QELS 2020
Publisher	Optica Publishing Group (formerly OSA)
ISBN (Print)	9781943580767
DOIs	https://doi.org/10.1364/CLEO_QELS.2020.FF2Q.6
Publication status	Published - 2020
Externally published	Yes
Event	CLEO: QELS_Fundamental Science, CLEO_QELS 2020 - Washington, United States Duration: May 10 2020 → May 15 2020

Publication series

Name	Optics InfoBase Conference Papers
Volume	Part F182-CLEO-QELS 2020
ISSN (Electronic)	2162-2701

Conference

Conference	CLEO: QELS_Fundamental Science, CLEO_QELS 2020
Country/Territory	United States
City	Washington
Period	5/10/20 → 5/15/20

Bibliographical note

Publisher Copyright:
CLEO 2020 © OSA 2020.

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Mechanics of Materials

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10.1364/CLEO_QELS.2020.FF2Q.6

Cite this

Mehdi Jadidi, M., Chen, C. Y., Li, B., Ginsberg, J. S., Chae, S. H., Joshi, C., Patwardhan, G., Watanabe, K., Taniguchi, T., Hone, J., & Gaeta, A. L. (2020). Engineering atomic defects in hexagonal boron nitride via resonant optical excitation of phonons. In CLEO: QELS_Fundamental Science, CLEO_QELS 2020 (Optics InfoBase Conference Papers; Vol. Part F182-CLEO-QELS 2020). Optica Publishing Group (formerly OSA). https://doi.org/10.1364/CLEO_QELS.2020.FF2Q.6

@inproceedings{62ae59c751f94bfbbd4dc3ea3ef1f1d9,

title = "Engineering atomic defects in hexagonal boron nitride via resonant optical excitation of phonons",

abstract = "We introduce an approach to engineer defects in hBN using intense pulses resonant with phonons at 7.3 µm. Such defects are highly subwavelength (< 30 nm) with an alignment sensitive to the polarization.",

author = "{Mehdi Jadidi}, M. and Chen, {Cecilia Y.} and Baichang Li and Ginsberg, {Jared S.} and Chae, {Sang Hoon} and Chaitali Joshi and Gauri Patwardhan and Kenji Watanabe and Takashi Taniguchi and James Hone and Gaeta, {Alexander L.}",

note = "Publisher Copyright: CLEO 2020 {\textcopyright} OSA 2020.; CLEO: QELS_Fundamental Science, CLEO_QELS 2020 ; Conference date: 10-05-2020 Through 15-05-2020",

year = "2020",

doi = "10.1364/CLEO_QELS.2020.FF2Q.6",

language = "English",

isbn = "9781943580767",

series = "Optics InfoBase Conference Papers",

publisher = "Optica Publishing Group (formerly OSA)",

booktitle = "CLEO",

}

Mehdi Jadidi, M, Chen, CY, Li, B, Ginsberg, JS, Chae, SH, Joshi, C, Patwardhan, G, Watanabe, K, Taniguchi, T, Hone, J & Gaeta, AL 2020, Engineering atomic defects in hexagonal boron nitride via resonant optical excitation of phonons. in CLEO: QELS_Fundamental Science, CLEO_QELS 2020. Optics InfoBase Conference Papers, vol. Part F182-CLEO-QELS 2020, Optica Publishing Group (formerly OSA), CLEO: QELS_Fundamental Science, CLEO_QELS 2020, Washington, United States, 5/10/20. https://doi.org/10.1364/CLEO_QELS.2020.FF2Q.6

Engineering atomic defects in hexagonal boron nitride via resonant optical excitation of phonons. / Mehdi Jadidi, M.; Chen, Cecilia Y.; Li, Baichang et al.
CLEO: QELS_Fundamental Science, CLEO_QELS 2020. Optica Publishing Group (formerly OSA), 2020. (Optics InfoBase Conference Papers; Vol. Part F182-CLEO-QELS 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Engineering atomic defects in hexagonal boron nitride via resonant optical excitation of phonons

AU - Mehdi Jadidi, M.

AU - Chen, Cecilia Y.

AU - Li, Baichang

AU - Ginsberg, Jared S.

AU - Chae, Sang Hoon

AU - Joshi, Chaitali

AU - Patwardhan, Gauri

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Hone, James

AU - Gaeta, Alexander L.

PY - 2020

Y1 - 2020

N2 - We introduce an approach to engineer defects in hBN using intense pulses resonant with phonons at 7.3 µm. Such defects are highly subwavelength (< 30 nm) with an alignment sensitive to the polarization.

AB - We introduce an approach to engineer defects in hBN using intense pulses resonant with phonons at 7.3 µm. Such defects are highly subwavelength (< 30 nm) with an alignment sensitive to the polarization.

UR - http://www.scopus.com/inward/record.url?scp=85095450404&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85095450404&partnerID=8YFLogxK

U2 - 10.1364/CLEO_QELS.2020.FF2Q.6

DO - 10.1364/CLEO_QELS.2020.FF2Q.6

M3 - Conference contribution

AN - SCOPUS:85095450404

SN - 9781943580767

T3 - Optics InfoBase Conference Papers

BT - CLEO

PB - Optica Publishing Group (formerly OSA)

T2 - CLEO: QELS_Fundamental Science, CLEO_QELS 2020

Y2 - 10 May 2020 through 15 May 2020

ER -

Engineering atomic defects in hexagonal boron nitride via resonant optical excitation of phonons

Abstract

Publication series

Conference

Bibliographical note

ASJC Scopus Subject Areas

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